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Publikováno v:
Crystallography Reports. 58:998-1001
Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied d
Publikováno v:
Journal of physics / Conference Series 712, 012016 (2016). doi:10.1088/1742-6596/712/1/012016
16. International Conference on X-ray Absorption Fine Structure, XAFS16, Karlsruhe, Germany, 2015-08-23-2015-08-28
16. International Conference on X-ray Absorption Fine Structure, XAFS16, Karlsruhe, Germany, 2015-08-23-2015-08-28
16. International Conference on X-ray Absorption Fine Structure, XAFS16, Karlsruhe, Germany, 23 Aug 2015 - 28 Aug 2015 ; Journal of physics / Conference Series 712, 012016(2016). doi:10.1088/1742-6596/712/1/012016
X-ray absorption spectroscopy o
X-ray absorption spectroscopy o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c219e76112f8d02a4eb316e602b22667
Autor:
Kirill Kovnir, W. Caliebe, Michael Shatruk, Alexander Yaroslavtsev, Roman Chernikov, Ivan A. Zaluzhnyy, Corey M. Thompson, Alexey P. Menushenkov
Publikováno v:
JETP Letters. 96:44-48
The features of near-edge structure around the L 3-Eu absorption edge are investigated in EuCo2P2, Pr1 − x Eu x Co2P2 (x = 0.2, 0.4), and Nd0.6Eu0.4Co2P2 by means of resonant inelastic X-ray scattering (RIXS). Europium is shown to be in the interme
Autor:
Jaroslaw Z. Domagala, Tomasz Wojciechowski, Janusz Sadowski, Boguslawa Kurowska, Elżbieta Dynowska, J. Bak-Misiuk, W. Caliebe, Sławomir Kret, A. Kwiatkowski, P. Romanowski
Publikováno v:
Radiation Physics and Chemistry. 80:1051-1057
The results of structural and magnetic characterization of GaMnSb layers grown on GaSb(0 0 1) and GaAs(1 1 1) substrates are presented. The presence of hexagonal, highly oriented MnSb inclusions embedded in GaSb matrix has been demonstrated. The latt
Publikováno v:
Radiation Physics and Chemistry. 80:1088-1091
Implantation creates an opportunity for creation of ferromagnetic MnSb inclusions, which may be of interest for application in spintronics. Three sets of Mn-ion implanted (0 0 1) and (1 1 1) GaSb crystals prepared at different implantation and anneal
Autor:
D. Żymierska, B. Kozankiewicz, L. Nowicki, Dorota Klinger, Roman Minikayev, K. Nowakowska-Langier, Jerzy B. Pelka, W. Caliebe
Publikováno v:
Radiation Physics and Chemistry. 80:1064-1067
Silicon single crystals were implanted with Ge or Sn ions and then annealed by nanosecond laser beam in a single-pulse mode. The structural changes caused by the laser annealing are studied by means of the Rutherford back-scattering and X-ray diffrac
Autor:
W. Caliebe, E. Lusakowska, Elżbieta Dynowska, Adam Barcz, Andrzej Misiuk, J. Bak-Misiuk, W. Paszkowicz, P. Romanowski, Janusz Sadowski, Jaroslaw Z. Domagala
Publikováno v:
Radiation Physics and Chemistry. 78:S116-S119
GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion m
Autor:
Klaus Sokolowski-Tinten, Jaromir Chalupsky, C. Riekel, A. Petroutchik, Libor Juha, Richard A. London, Dorota Klinger, Richard J. Davies, Jacek Krzywinski, W. Caliebe, J. Cihelka, Stefan P. Hau-Riege, W. Szuszkiewicz, Ryszard Sobierajski, Sven Toleikis, L. Vysin, W. Paszkowicz, Nikola Stojanovic, Manfred Burghammer, Robert Nietubyć, Ulf Zastrau, Marek Jurek, Andrzej Wawro, Věra Hájková, Jerzy B. Pelka, Tomáš Burian, Elżbieta Dynowska, D. Zymierska
Publikováno v:
Radiation Physics and Chemistry. 78:S46-S52
The article presents preliminary investigation results on the near-surface damage produced by single pulses of XUV free-electron laser in the amorphous α-SiO 2 , the monocrystalline silicon and the epitaxial films of gold. The irradiation was delive
Autor:
Elżbieta Dynowska, Adam Barcz, P. Romanowski, J. Z. Domagala, Andrzej Misiuk, Rafal Jakiela, W. Caliebe, Jadwiga Bak-Misiuk
Publikováno v:
Materials Science and Engineering: B. :99-102
Effect of processing of Si:Mn at up to 1270 K (HT) under enhanced hydrostatic pressure (HP, up to 1.1 GPa) for 1 h on its microstructure has been investigated by X-ray and SIMS methods. Si:Mn was prepared by implantation at 610 K of Mn + ions (dose 1