Zobrazeno 1 - 3
of 3
pro vyhledávání: '"W. C. Robinette"'
Publikováno v:
Journal of The Electrochemical Society. 115:948-955
The d‐c conduction and complex dielectric constant of silicon nitride films prepared by silane‐ammonia reaction have been studied as a function of the composition of the gaseous ambient in which they were formed. The d‐c conductivity of the mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8b8d74ed47ff0df82c5b29a59cc039
https://doi.org/10.1149/1.2411484
https://doi.org/10.1149/1.2411484
Autor:
L. H. Hall, W. C. Robinette
Publikováno v:
Chemischer Informationsdienst. 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da777988cf55f038fa7ccd7cbe139712
https://doi.org/10.1002/chin.197202042
https://doi.org/10.1002/chin.197202042
Autor:
W. C. Robinette, Lou H. Hall
Publikováno v:
Journal of The Electrochemical Society. 118:1624
Aluminum oxide (both amorphous and ) have been deposited from the reaction of aluminum trimethyl and nitrous oxide at 650°C. The refractive index is and the dielectric constant is . Films have a resistivity of 1014 ohm‐cm at 106 V/cm. D‐C curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045745258abe58e12a98e83d98c124e9
https://doi.org/10.1149/1.2407797
https://doi.org/10.1149/1.2407797