Zobrazeno 1 - 10
of 57
pro vyhledávání: '"W. C. Holton"'
Publikováno v:
IEEE Transactions on Electron Devices. 47:1864-1872
We develop a self-consistent, ensemble Monte Carlo device simulator that is capable of modeling channel carrier quantization and polysilicon gate depletion in nanometer-scale n-MOSFETs. A key feature is a unique bandstructure expression for quantized
Publikováno v:
Physical Review A. 59:1098-1101
In most current quantum computers simple electromagnetic pulses implement computations using a minimal set of universal gates. We propose an approach in which quantum control techniques combined with flexible electromagnetic pulse shaping are used to
Publikováno v:
IEEE Transactions on Electron Devices. 46:1760-1767
In this paper, we employ a comprehensive Monte Carlo-based simulation method to model hot-electron injection, to predict induced device degradation, and to simulate and compare the performance of two double-gate fully depleted silicon-on-insulator n-
Publikováno v:
Physical Review A. 58:R1633-R1636
A redundancy in the existing Deutsch-Jozsa quantum algorithm is removed and a refined algorithm, which reduces the size of the register and simplifies the function evaluation, is proposed. The refined version allows a simpler analysis of the use of e
Publikováno v:
IEEE Transactions on Electron Devices. 45:254-260
Channel-engineered MOSFETs with retrograde doping profiles are expected to provide increased carrier mobility and immunity to short channel effects. However, the physical mechanisms responsible for device performance of retrograde designs in the deep
Publikováno v:
Applied optics. 13(10)
We report the waveguiding properties of sputtered films of three chalcogenide glasses: As(2)S(3), Ge(28)Sb(l2)Se(60), and Ge(33)As(l2)Se(55), at 1.064microm. Propagation losses of less than 1 dB/cm have been measured for As(2)S(3) films. Delineated g
Publikováno v:
Journal of Applied Physics. 83:4988-4990
An efficient full-band Monte Carlo program for high-energy carrier transport is employed to investigate hole impact ionization in p-Si for a range of electric fields up to 800 kV/cm and lattice temperatures between 77 and 450 K. An empirical expressi
Autor:
W C Holton
Publikováno v:
Environmental Health Perspectives
Autor:
W C Holton
Publikováno v:
Environmental Health Perspectives
Individual countries acting alone cannot solve environmental problems that span national borders. The Global Environment Facility (GEF) was created in 1991 to serve as a mechanism for international cooperation in the funding of grants to address conc
Autor:
W C Holton
Publikováno v:
Environmental Health Perspectives
Farmers strive to increase the yield of their fields by adding nutrients and water to the land, and using pesticides to control insects and disease. In addition to bountiful harvests, the results of their endeavors may include elevated amounts of fer