Zobrazeno 1 - 10
of 238
pro vyhledávání: '"W. Bronner"'
Autor:
M. Benecke, H. Heußen, R. Rehm, A. Sieck, R. Aidam, B. Göhler, A. Bächle, F. Rutz, P. Lutzmann, S. Brunner, W. Bronner
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XV.
High-performance short-wavelength infrared (SWIR) photodetectors can be realized in the InGaAs material system, providing a typical cutoff wavelength of 1.7 μm, which covers a wide part of the nightglow spectrum as well as the emission lines of avai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fbc31e6b31efb030766e83302548a24
https://doi.org/10.1117/12.2325665
https://doi.org/10.1117/12.2325665
Publikováno v:
IEEE Transactions on Electron Devices. 57:3355-3360
Monolithic interconnected modules are large-area high-voltage photovoltaic devices that are realized through solar cell segments that are series-connected via interconnection trenches during wafer processing. This paper investigates different process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::549d72336bedaaa8dd1afd9a4fc3a61e
https://doi.org/10.1109/ted.2010.2076190
https://doi.org/10.1109/ted.2010.2076190
Publikováno v:
Journal of Non-Crystalline Solids. :477-480
We report on proton irradiation of microcrystalline silicon with 2 MeV protons and find a drop in the mobility–lifetime product related to an increase in the density of gap states as revealed by modulated photocurrent experiments. The dark conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff3859512776743b3bb1786bb03e717d
https://doi.org/10.1016/j.jnoncrysol.2004.03.023
https://doi.org/10.1016/j.jnoncrysol.2004.03.023
Publikováno v:
Thin Solid Films. 427:51-55
We present a systematic study of isochronal annealing of electron-irradiated microcrystalline silicon thin films using a set of complementary characterisation techniques: electrically detected magnetic resonance, steady-state and modulated photocurre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee39e3f837a7c8a8848d6bdd019a87d
https://doi.org/10.1016/s0040-6090(02)01240-3
https://doi.org/10.1016/s0040-6090(02)01240-3
Autor:
R. Brüggemann, W. Bronner, P. Roca i Cabarrocas, D. Mencaraglia, Jean-Paul Kleider, Michael Mehring
Publikováno v:
Journal of Non-Crystalline Solids. :551-555
Due to its specific microstructure with nanocrystals embedded in an amorphous matrix, polymorphous silicon (pm-Si:H) has been shown to present interesting properties for large area electronic applications. In particular, this material exhibits a lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2318b4269f32cb93f9cc2726ca0f3726
https://doi.org/10.1016/s0022-3093(01)01201-7
https://doi.org/10.1016/s0022-3093(01)01201-7
Publikováno v:
Journal of Non-Crystalline Solids. :632-636
We report and detail changes in the electronic properties of microcrystalline silicon (μc-Si) films after 1-MeV electron and 100-MeV proton irradiation. We studied these irradiation effects on undoped μc-Si samples from plasma-enhanced chemical vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffab87032f8bfa9ff68cf39829ba58a2
https://doi.org/10.1016/s0022-3093(01)00971-1
https://doi.org/10.1016/s0022-3093(01)00971-1
Publikováno v:
SPIE Proceedings.
We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD)for short-wave infrared applications with demand for high gain and low breakdown voltage. The APDs weregrown by molecular beam epitaxy. Dark and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32631e81b7f6ceaa5a084c82ddad519c
https://doi.org/10.1117/12.2067242
https://doi.org/10.1117/12.2067242
Publikováno v:
Solid State Communications. 119:23-27
Electron irradiation with 1-MeV electrons induces pronounced changes in the optical and electronic properties of microcrystalline silicon, namely an increase in sub-gap absorption as measured by the constant photocurrent method and a deterioration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ecb603bf4c9aa7218947099a88844b0
https://doi.org/10.1016/s0038-1098(01)00203-4
https://doi.org/10.1016/s0038-1098(01)00203-4
Publikováno v:
Journal of Non-Crystalline Solids. :534-539
We present results from standard and electrically detected magnetic resonance on nanocrystalline silicon from hot-wire and plasma-enhanced chemical vapour deposition for which the Raman spectra showed the same large crystalline fraction. Based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95d8dfcad2131a9774395f06504d6fb1
https://doi.org/10.1016/s0022-3093(99)00844-3
https://doi.org/10.1016/s0022-3093(99)00844-3
Publikováno v:
Materials Science and Engineering: B. 44:12-15
Dopant diffusion is investigated by depth profiling with secondary ion mass spectrometry (SIMS) in heterostructures containing Be-doped short-period superlattice Al x Ga 1 − x As layers (0.3 ⩽x⩽0.8) grown by molecular beam epitaxy. At a Be conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2f1a829889ef091c6343961c6861bb
https://doi.org/10.1016/s0921-5107(96)01755-2
https://doi.org/10.1016/s0921-5107(96)01755-2