Zobrazeno 1 - 10
of 90
pro vyhledávání: '"W. Brockerhoff"'
Publikováno v:
physica status solidi (c). :922-927
Physical simulations play a major role in device development and optimization. We use ATLAS by Silvaco to perform full two dimensional physical simulations of InGaAs/InP HBTs containing a single heterojunction. We present comparisons between measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::610c786153856ab42ed2d5bfef4ea9b5
https://doi.org/10.1002/pssc.200306227
https://doi.org/10.1002/pssc.200306227
In this paper a new direct evaluation technique for the small-signal equivalent circuit of AlGaAs/GaAs Heterojunction Bipolar Transistors is presented. Based on the known hot and cold measurement technique, all small-signal equivalent circuit element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f644b7b2b79a2ed0e95e6339242afaf
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0012074844
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0012074844
Autor:
M. Agethen, Ralf Reuter, S. van Waasen, W. Brockerhoff, D. Peters, Franz-Josef Tegude, U. Auer
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:977-983
A new small-signal and noise-equivalent circuit for heterostructure field-effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daa49e593e6d38e40bd1dd7453f1dfd1
https://doi.org/10.1109/22.588612
https://doi.org/10.1109/22.588612
Autor:
Franz-Josef Tegude, W. Schlapp, F. Buchali, R. Lösch, C. Heedt, Werner Prost, D. Fritzsche, W. Brockerhoff, H. Nickel
Publikováno v:
IEEE Transactions on Electron Devices. 41:1685-1690
Impact ionization in the channel of InAlAs/InGaAs HEMT's was shown to be a reason for excess gate leakage current. Hot electrons in the high field region of the channel under the gate generate electron-hole pairs. The generated holes can reach the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5498cbcbedcd0a99e2a0bef830c51f15
https://doi.org/10.1109/16.324575
https://doi.org/10.1109/16.324575
Autor:
Ralf Reuter, J. Schubert, W. Zander, D. Peters, J. Kraus, M. Bode, H. Meschede, W. Brockerhoff, J. Albers, Franz-Josef Tegude
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:2325-2331
An on-wafer measurement setup for the microwave characterization of HEMTs and high-T/sub c/ superconductors at temperatures down to 20 K is presented. Both S-parameter and noise measurements can be performed in the frequency range from 45 MHz to 40 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::815324df7aea0410c46c01b7d47084ca
https://doi.org/10.1109/22.179897
https://doi.org/10.1109/22.179897
Publikováno v:
2008 20th International Conference on Indium Phosphide and Related Materials.
A fully complementary optical receiver design is presented utilizing two Monostable-Bistable Threshold Logic Elements, consisting of four Resonant Tunneling Diodes and a pin-photodetector in one circuitry. By complementary on and off switching of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ace3411625ff944fcfd286b9513fde8a
https://doi.org/10.1109/iciprm.2008.4702921
https://doi.org/10.1109/iciprm.2008.4702921
The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::723df6d6642c61565b42109fa78c41e1
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=62349104761
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=62349104761
Publikováno v:
Solid-State Electronics. 33:1393-1400
The temperature dependence of the d.c. and r.f. performance of n-GaAs/AlAs-superlattice heterostructure field-effect transistors (SLHFET) is investigated in detail. Results of r.f. measurements at 300 and 120 K in the dark and under illumination are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e262ac65161caa1622b804551f46deb
https://doi.org/10.1016/0038-1101(90)90114-t
https://doi.org/10.1016/0038-1101(90)90114-t
Autor:
W. Brockerhoff, Rainer Makowitz
Publikováno v:
European Transactions on Telecommunications. 1:401-409
A transient two-dimensional hydrodynamic device simulator is presented that allows an accurate modelling of charge transport in unipolar devices made of multiple valley semiconductor material. Carrier energy balance is included to account fon non-equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c99ded59916cf87813fe83e59d1e2fc
https://doi.org/10.1002/ett.4460010407
https://doi.org/10.1002/ett.4460010407
Publikováno v:
2007 European Microwave Integrated Circuit Conference.
A large signal measurement set up and analysis technique is developed to characterize and model the dynamic I/V characteristic of a two-terminal double-barrier quantum well structure, the resonant tunnelling diode (RTD). The devices investigated have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86ea45d53980024b2f842800dd8f4d70
https://doi.org/10.1109/emicc.2007.4412685
https://doi.org/10.1109/emicc.2007.4412685