Zobrazeno 1 - 10
of 16
pro vyhledávání: '"W. Brock Alexander"'
Publikováno v:
Infrared Technology and Applications XLIV.
We first reported on a process for on-axis InSb crystal growth in 2014. As we have further developed on-axis (111) crystal growth, we have observed and measured a new distinct regime of interface-controlled dopant segregation. This effect is usually
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc6509792758350f8061684fce1ee75
https://doi.org/10.1117/12.2305239
https://doi.org/10.1117/12.2305239
Autor:
Joseph G. Bolke, Mike Spicer, Guillaume Gelinas, Peter Wall, Jean-Nicolas Beaudry, W. Brock Alexander, Kathryn O'Brien
Publikováno v:
Sensors, Systems, and Next-Generation Satellites XXI.
CdTe and CZT materials are technologies for gamma and x-ray imaging for applications in industry, homeland security, defense, space, medical, and astrophysics. There remain challenges in uniformity over large detector areas (50~75 mm) due to a combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197fd1043be422f945fd48283d065a03
https://doi.org/10.1117/12.2278584
https://doi.org/10.1117/12.2278584
Publikováno v:
Surface and Coatings Technology. :387-391
Diamond crystallites and thin films were grown on (100) Si using CH 4 , CO and H 2 gases flowing over a heated tungsten filament. The relative sizes of the {100} and {111} facets were used to characterize the growth rate ratio along these two crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5053e13cbaf96bf1e7e85e8aea31f84
https://doi.org/10.1016/s0257-8972(07)80053-3
https://doi.org/10.1016/s0257-8972(07)80053-3
Autor:
Colleen S. Spiegel, John S. Sandoval, Paul H. Holloway, L. van den Berg, Mark Davidson, W. Brock Alexander, Narada Bradman
Publikováno v:
Hard X-Ray and Gamma-Ray Detector Physics VII.
The performance of semiconductor radiation detectors is a function of electronic properties which are in turn related to crystallographic quality. In this paper we used devices from and growth regions of several different HgI2 crystals grown by the P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95015b63bd32cb05e385cead6cb23c6e
https://doi.org/10.1117/12.617989
https://doi.org/10.1117/12.617989
Publikováno v:
SPIE Proceedings.
We investigated bulk-grown HgI 2 crystals to better understand the nature of crystallographic defects and strain/stress in different growth regions of the crystal and their affect on the performance of HgI 2 -based radiation detectors. Double-axis an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95a57d591d1bbd265af1631c717a23f
https://doi.org/10.1117/12.565027
https://doi.org/10.1117/12.565027
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2943-2945
MicroRaman spectroscopy has been used to measure stress in diamond with improved precision. Stress was induced by rf sputter deposited tungsten films of 1‐ and 9‐μm thickness. Preliminary data showed a systematic error in the diamond Raman peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e73bdfa12a450d70e04d528ed5408d
https://doi.org/10.1116/1.578973
https://doi.org/10.1116/1.578973
Publikováno v:
MRS Proceedings. 423
Homoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c814144544eed9b53ebcefabecad9a1
https://doi.org/10.1557/proc-423-305
https://doi.org/10.1557/proc-423-305
Publikováno v:
MRS Proceedings. 416
Diamond films were grown on (100) and (110) oriented natural diamond substrates by hot filament assisted chemical vapor deposition (HFCVD) to thicknesses of 7 to 100μm. Raman spectroscopy was used to measure tensile stresses of up to ∼2GPa for som
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3663498ad3cc9c04726c9cfa591a5f
https://doi.org/10.1557/proc-416-57
https://doi.org/10.1557/proc-416-57
Publikováno v:
MRS Proceedings. 339
We have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1fb81c51d6864fc63e2e7e40e88c8b3
https://doi.org/10.1557/proc-339-301
https://doi.org/10.1557/proc-339-301
