Zobrazeno 1 - 10
of 106
pro vyhledávání: '"W. Brezna"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:1196-1199
In this work, the influence of the tip-geometry and an unusual low frequency behavior in scanning capacitance microscopy is investigated experimentally and theoretically on metal–oxide–semiconductor (MOS) and Schottky type junctions on gallium–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e05254a36afb8056a8e096067538dd
https://doi.org/10.1016/j.physe.2009.11.114
https://doi.org/10.1016/j.physe.2009.11.114
Publikováno v:
physica status solidi c. 6:793-796
In this work, we present a scheme for room temperature detection of single subsurface InAs quantum dots buried in GaAs by Atomic Force Microscopy based local photocurrent spectroscopy. The measurements were performed at room temperature and ambient c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9b7dadcc5ee07be374751eedd97bb6
https://doi.org/10.1002/pssc.200880611
https://doi.org/10.1002/pssc.200880611
Publikováno v:
Semiconductor Science and Technology. 22:1209-1212
In this work, photocurrent images of lithographically processed GaAs/AlAs heterostructures are recorded by an atomic force microscope. It is found that the AFM tip sample contact is strongly dependent on the thickness of the native oxide layer on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc878918657aedb34620a678be81f2f
https://doi.org/10.1088/0268-1242/22/11/005
https://doi.org/10.1088/0268-1242/22/11/005
Autor:
Jürgen Smoliner, F. F. Schrey, W. Brezna, Karl Unterrainer, Tomas Roch, Gottfried Strasser, Aaron Maxwell Andrews, Gernot Fasching
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:183-186
Photocurrent (PC) spectroscopy is employed to study the carrier escape from self-assembled InAs/GaAs quantum dots (QDs) embedded in a Schottky photodiode structure. As a function of the applied field, we detect a shift of the exciton ground-state tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7d907a90f42f7937a88562a155d90f
https://doi.org/10.1016/j.physe.2005.12.034
https://doi.org/10.1016/j.physe.2005.12.034
Autor:
W. Brezna, S. Müller, M. Fischer, M. Schramboeck, Heinz D. Wanzenboeck, Emmerich Bertagnolli, J. Gottsbachner
Publikováno v:
Microelectronic Engineering. 83:784-787
The fabrication of nanostructured dielectrics of high purity produced by electron beam induced deposition (EBID) was investigated. Additionally, the process parameters were optimized towards high deposition rate. Silicon oxide was chosen as exemplary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7907568b9ff004b0577629c166d3849f
https://doi.org/10.1016/j.mee.2006.01.035
https://doi.org/10.1016/j.mee.2006.01.035
Publikováno v:
Semiconductor Science and Technology. 20:903-907
In this work, quantitative scanning capacitance spectroscopy studies on bulk GaAs samples and InAs quantum dots are carried out in an ambient atmosphere. The experimental results are described by a simple spherical capacitor model, and the correspond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db60155a11e3551b6787a837065bc73
https://doi.org/10.1088/0268-1242/20/9/002
https://doi.org/10.1088/0268-1242/20/9/002
Autor:
Jürgen Smoliner, Karl Unterrainer, F. F. Schrey, Gottfried Strasser, Gernot Fasching, W. Brezna
Publikováno v:
physica status solidi (c). 2:3114-3117
In this work, we present a carrier escape study from InAs/GaAs self assembled QD's by the use of photocurrent measurements. As a function of the applied field, we detect a shift of the exciton ground state transition due to the quantum-confined Stark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc42f3b8610245a4b68249452db0c52
https://doi.org/10.1002/pssc.200460772
https://doi.org/10.1002/pssc.200460772
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1644-1648
In this article we report the straggling of long-range implantation damage in silicon in the forefront of a focused ion beam induced amorphization zone. Irradiation was carried out at room temperature at a current density of 0.75 A cm−2 (5×1018 io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36488a3bc9b90623a31212e46dc9f9c0
https://doi.org/10.1116/1.1590964
https://doi.org/10.1116/1.1590964
Autor:
Jürgen Smoliner, Alois Lugstein, W. Brezna, Heinz Dr. Wanzenböck, Emmerich Bertagnolli, Erich Gornik
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 19:178-182
In this article we explore the application of scanning capacitance microscopy (SCM) for studying focused ion beam (FIB) induced damage in silicon. We qualitatively determine the technologically important beam shape by measuring the SCM image of FIB p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb39f4603e890ff23f8f1df74cbdc01
https://doi.org/10.1016/s1386-9477(03)00330-8
https://doi.org/10.1016/s1386-9477(03)00330-8
Publikováno v:
Applied Physics A: Materials Science & Processing. 76:1035-1039
This paper presents a novel technology of lateral profile engineering addressing nonuniform-channel MOS devices. For the first time MOS devices with highly nonuniform 2-D doping profiles are achieved by post-processing implantation of channel doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19570c2e7ac1fc32a3ad21245357a7cd
https://doi.org/10.1007/s00339-002-1945-z
https://doi.org/10.1007/s00339-002-1945-z