Zobrazeno 1 - 10
of 105
pro vyhledávání: '"W. Benyon"'
Publikováno v:
Journal of Crystal Growth. 445:110-114
We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In₁₋xGaxAsyP₁₋y quaternary layers (x=0.18–0.41 and y=0.34–0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a0134292766d1f904e2914d27dcf6a0
https://doi.org/10.1016/j.jcrysgro.2016.04.053
https://doi.org/10.1016/j.jcrysgro.2016.04.053
We propose and demonstrate a novel process to fabricate planar avalanche photodiodes using selective area growth (SAG) followed by a single Zn diffusion through the SAG material using the same dielectric mask. The tapered surface profile of the SAG e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8227180c8bd3f389969ba981d3605d65
https://nrc-publications.canada.ca/eng/view/object/?id=179353aa-1332-4122-b610-a8e0a60afa5f
https://nrc-publications.canada.ca/eng/view/object/?id=179353aa-1332-4122-b610-a8e0a60afa5f
Publikováno v:
Journal of Crystal Growth. 393:81-84
We have developed a model which integrates calculation of InAlGaAs multiple quantum well (MQW) transition energies using the envelope function approximation with a statistical analysis of the PL emission wavelength, net strain and MQW period measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eace821dfb8c094819f5ecff3749a185
https://doi.org/10.1016/j.jcrysgro.2013.10.019
https://doi.org/10.1016/j.jcrysgro.2013.10.019
Publikováno v:
Journal of Crystal Growth. 393:85-88
We investigate the materials properties and dark currents of planar InP/InGaAs avalanche photodiodes (APDs) in which the p-dopant, Zn, is introduced by diffusion in an MOCVD reactor using dimethylzinc (DMZn) as the source. APD dark currents are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12e5d23a717bc533425e5f4c0dfafe9a
https://doi.org/10.1016/j.jcrysgro.2013.09.053
https://doi.org/10.1016/j.jcrysgro.2013.09.053
We investigated the diffusion of zinc into InP/InGaAs avalanche photodiode structures using dimethylzinc in an MOCVD reactor. Diffusion profiles were measured by secondary ion mass spectrometry and compared with cleaved cross-sections imaged by scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::853e4790244b89111925847e7334d1a1
https://nrc-publications.canada.ca/eng/view/object/?id=5569572c-0825-4e16-912f-6d47a092fb79
https://nrc-publications.canada.ca/eng/view/object/?id=5569572c-0825-4e16-912f-6d47a092fb79
We study diffusion of zinc into InP in a multiwafer OMVPE reactor using dimethylzinc as the diffusant source. The resulting diffusion profiles are measured by electrochemical capacitance–voltage profiling and by secondary ion mass spectrometry and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6383b39b7d7f146ff0243e4b297baa13
https://nrc-publications.canada.ca/eng/view/object/?id=988768e6-e2a2-4d1d-884b-e56145ccffc4
https://nrc-publications.canada.ca/eng/view/object/?id=988768e6-e2a2-4d1d-884b-e56145ccffc4
Autor:
D.G. Knight, W. Benyon
Publikováno v:
Journal of Crystal Growth. 102:249-254
Routine growth of semi-insulating (Ti:Zn)InP with resistivity values between 4×104 and 105 ω cm has been achieved using liquid phase epitaxy. A consistent bakeout procedure for In followed by p-doping using p+-InP source material results in p- epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3add95bf0fab0d9958d4f8966c2ef23
https://doi.org/10.1016/0022-0248(90)90908-4
https://doi.org/10.1016/0022-0248(90)90908-4
Publikováno v:
Journal of Infection. 55:e56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe07d0c12aee099e8aa496904cb20eaf
https://doi.org/10.1016/j.jinf.2007.04.059
https://doi.org/10.1016/j.jinf.2007.04.059
Autor:
B W Benyon
Publikováno v:
Wasafiri. 11:65-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2acc4b55ce1ffeca3f33309de7bf791a
https://doi.org/10.1080/02690059508589464
https://doi.org/10.1080/02690059508589464
InGaAsP/InP distributed feedback laser wafers grown by an interrupted liquid phase epitaxy technique
Autor:
D.G. Knight, W. Benyon
Publikováno v:
Journal of Crystal Growth. 92:659-662
An interrupted liquid phase epitaxy technique for the growth of InGaAsP/InP distributed feedback laser wafers is described, which uses low temperature growth of an initial γ=1.0 μm InGaAsP cladding layer followed by high temperature growth of all s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c084f71466a8cfd6645e1e1ef2a9b14d
https://doi.org/10.1016/0022-0248(88)90050-4
https://doi.org/10.1016/0022-0248(88)90050-4