Výsledky vyhledávání - "W. Bächtold"

Highly reflective AlGaAsSb/InP Bragg reflector at 1.55μm grown by MOVPE

Autor: O. Ostinelli, Markus Haiml, Guilhem Almuneau, M. Ebnöther, Emilio Gini, W. Bächtold, Elisabeth Müller, Rachel Grange, U. Keller

Publikováno v: Journal of Crystal Growth. 286:247-254

The metalorganic vapor-phase epitaxy growth of a highly reflective 24-pair AlGaAsSb/InP-distributed Bragg reflector (DBR) is reported for the first time. The influence of the growth parameters such as the V/III input ratio, the growth temperature and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::551d3dd65856808ebacc1c9868489221
https://doi.org/10.1016/j.jcrysgro.2005.09.026

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Chapter 1. Macrobius: Commentarius ex Cicerone in Somnium Scipionis

Autor: W. Bächtold, Lorenz Jung, Maria Meyer-Grass

Publikováno v: Dream Interpretation Ancient and Modern: Notes from the Seminar Given in 1936-1941: Notes from the Seminar Given in 1936-1941

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b13be374ca690d906a5d51cbaa907fd
https://doi.org/10.1515/9781400852796-007

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Coupled one-dimensional subbands in in-plane magnetic fields

Autor: Thomas Heinzel, Arthur C. Gossard, Gian Salis, Klaus Ensslin, W. Bächtold, K. D. Maranowski, O. Homan

Publikováno v: Physica B: Condensed Matter. :384-387

The conductance of a quantum point contact fabricated on a wide two-dimensional (2D) electron gas has been measured as a function of the split-gate voltage for different magnetic fields applied in the plane of the electron gas. In this quantum point

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62b05aa35eaf466d268a7e3c7f987179
https://doi.org/10.1016/s0921-4526(98)00487-6

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Herschel/HIFI detections of hydrides towards AFGL 2591. Envelope emission versus tenuous cloud absorption [Letter]

Autor: Javier R. Goicoechea, M. Tafalla, Pierre Encrenaz, P. Stäuber, Jes K. Jørgensen, Jonathan Braine, T. Giannini, Laurent Pagani, Steven D. Doty, Alain Baudry, Michael Olberg, Rafael Bachiller, M. Marseille, Th. de Graauw, E. F. van Dishoeck, Lars E. Kristensen, R. Schieder, José Cernicharo, André Csillaghy, S. Bruderer, S. F. Wampfler, T. A. van Kempen, Paolo Saraceno, Arnold O. Benz, Gary J. Melnick, David A. Neufeld, T. Jacq, C. Dedes, J. Santiago-Garcia, N. Honingh, John C. Pearson, R. Shipman, Frank Helmich, D. Teyssier, M. Fich, A. Di Giorgio, Willem Jellema, Edwin Bergin, Per Bjerkeli, N. Whyborn, Paola Caselli, R. Plume, Ruud Visser, Dariusz C. Lis, M. Melchior, Fabrice Herpin, Christophe Risacher, B. Larsson, Emmanuel Caux, Brunella Nisini, C. McCoey, Christian Monstein, F. Daniel, Geoffrey A. Blake, Doug Johnstone, Gregory J. Herczeg, Umut A. Yildiz, Berengere Parise, Claudio Codella, Sylvain Bontemps, René Liseau, Milena Benedettini, Michiel R. Hogerheijde, Friedrich Wyrowski, Carsten Dominik, F. F. S. van der Tak, W. Bächtold, Asunción Fuente

Publikováno v: Astronomy & Astrophysics, 521. EDP Sciences
Astronomy and Astrophysics-A&A
Astronomy and Astrophysics-A&A, 2010, 521, pp.L44. ⟨10.1051/0004-6361/201015098⟩
Astronomy and Astrophysics-A&A, EDP Sciences, 2010, 521, pp.L44. ⟨10.1051/0004-6361/201015098⟩
Astronomy & astrophysics, 521:L44. EDP Sciences

The Heterodyne Instrument for the Far Infrared (HIFI) onboard the Herschel Space Observatory allows the first observations of light diatomic molecules at high spectral resolution and in multiple transitions. Here, we report deep integrations using HI

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05291f4b74e5aa93d680c48d10f5140

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Scanning surface harmonic microscopy: Scanning probe microscopy based on microwave field‐induced harmonic generation

Autor: W. Knop, Bruno Michel, Heinrich Rohrer, R. Schierle, W. Mizutani, H. Benedickter, W. Bächtold, A. Jarosch

Publikováno v: Review of Scientific Instruments. 63:4080-4085

A scanning probe microscope has been integrated into a microwave resonator tunable from 2.2 to 3.4 GHz with a quality factor Q larger than 1000. Nonlinear phenomena caused generation of higher harmonics when rf fields in the range of 109 V/m were app

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47094286c2e07f7c7bac64821b41fad7
https://doi.org/10.1063/1.1143215

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Simplified equivalent circuit for the noise-figure calculation of microwave transistors

Autor: W. Bächtold, M.J.O. Strutt

Publikováno v: Electronics Letters. 4:209-210

The equivalent circuit of transistors in the frequency range 0.6?4.2 GHz has been determined. The noise sources of the germanium transistor are represented in the common-emitter connection, and the noise figure has been computed by analogue computati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4ef05691871cbca78e1a7ee9db0076d
https://doi.org/10.1049/el:19680159

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Noise-parameter measurements of microwave transistors up to 2.4 GHz

Autor: M.J.O. Strutt, W. Bächtold

Publikováno v: Electronics Letters. 3:323

Noise and gain measurements of microwave transistors in the frequency region 0.6?2.4 GHz have been carried out. The results, the optimum noise figure and the optimum source admittance as a function of frequency, as well as the optimum gain, noise fig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4123ddb1fcd7a5566ccb751fd6d57e69
https://doi.org/10.1049/el:19670247

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Analogue model for the signal-and-noise equivalent circuit of u.h.f. transistors

Autor: W. Bächtold, M.J.O. Strutt

Publikováno v: Electronics Letters. 2:335

The noise behaviour of microwave transistors is computed by an analogue model of the noise equivalent circuit. A specific example is used to verify the accuracy of the computation, by comparison with measured values up to 1500 MHz, for a transistor.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f99c0c2a99c8812e34a28351a0aec63e
https://doi.org/10.1049/el:19660283

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Optimum source admittance for minimum noise figure of microwave transistors

Autor: M.J.O. Strutt, W. Bächtold

Publikováno v: Electronics Letters. 4:346

Noise measurements of microwave transistors have shown that the optimum source admittance with respect to the minimum noise figure approaches the conjugate complex value of the transistor input admittance with increasing frequency. This fact is expla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5fb1ca8511ae0c23720b72eadd53c9ec
https://doi.org/10.1049/el:19680272

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