Zobrazeno 1 - 10
of 442
pro vyhledávání: '"W. Anwand"'
Autor:
D. J. Winarski, W. Anwand, A. Wagner, P. Saadatkia, F. A. Selim, M. Allen, B. Wenner, K. Leedy, J. Allen, S. Tetlak, D. C. Look
Publikováno v:
AIP Advances, Vol 6, Iss 9, Pp 095004-095004-10 (2016)
Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measure
Externí odkaz:
https://doaj.org/article/eb0f906fe09c4c61a235ad65f1a0506a
Autor:
Yvonna Jirásková, Maciej Oskar Liedke, Ivan Procházka, T. Vlasák, František Lukáč, J. Cizek, W. Anwand, Dušan Janičkovič
Publikováno v:
Acta Physica Polonica A. 137:255-259
Autor:
Andreas Wagner, Maik Butterling, Roman Böttger, W. Anwand, Oguz Yildirim, S. Cornelius, A. Smekhova, Kay Potzger, C. Bähtz
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :13-16
Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metalli
Autor:
W. Anwand, Shichen Su, Maik Butterling, Andreas Wagner, Cuong Ton-That, Matthew R. Phillips, Caiqin Luo, Francis Chi-Chung Ling, Muhammad Younas, Zilan Wang, M. Azizar Rahman
Publikováno v:
Scientific Reports
Scientific Reports 9(2019), 3534
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Scientific Reports 9(2019), 3534
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant VZn-related defect in the as-grown undoped ZnO
Autor:
O. Melikhova, Tetyana Konstantinova, F. Lukac, Igor Danilenko, Jakub Cizek, Ivan Procházka, W. Anwand, G. Brauer, Petr Hruška, M. O. Liedke
Publikováno v:
INTERNATIONAL CONFERENCE ON SCIENCE AND APPLIED SCIENCE (ICSAS) 2019.
Investigation of zirconia nanopowders, doped with metal cations of different valence (Mg2+, Ce4+), and ceramics, obtained by sintering these nanopowders, will be reported. The nanopowders were prepared by the co- precipitation method. The Doppler bro
Autor:
Andreas Wagner, Pooneh Saadatkia, Kevin D. Leedy, Micah Haseman, W. Anwand, David Winarski, David C. Look, Farida Selim, S. Tetlak
Publikováno v:
Journal of Electronic Materials. 45:6337-6345
Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, con
Autor:
Shichen Su, Andreas Wagner, Chongxin Shan, Muhammad Younas, Lok Ping Ho, Zilan Wang, Francis Chi-Chung Ling, W. Anwand
Publikováno v:
Physica B: Condensed Matter. 480:2-6
ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discu
Autor:
R. A. Yankov, Jörg Pezoldt, Wolfgang Skorupa, W. Anwand, V. Heera, Paul G. Coleman, G. Brauer, M. Voelskow
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2b345f14078ca668864e54510b855e8
https://doi.org/10.1201/9781315140810-68
https://doi.org/10.1201/9781315140810-68
Publikováno v:
SPIE Proceedings.
Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening sp
Autor:
Tetyana Konstantinova, Oksana Melikhova, W. Anwand, Igor Danilenko, Maciej Oskar Liedke, J. Cizek, Ivan Procházka, František Lukáč, Petr Hruška
Publikováno v:
12th International Workshop on Positron and Positronium Chemistry, 28.08.-01.09.2017, Lublin, Poland
Acta Physica Polonica A 132(2017)2, 1564-1567
Acta Physica Polonica A 132(2017)2, 1564-1567
Zirconium di-oxide (ZrO2 , zirconia) receives nowadays a big attention because of a variety of advantageous properties which make zirconia-based materials useful in numerous fields of practice, in particular, in ceramic industry and other high-temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91320a675c67620ea208b053845f6459
https://www.hzdr.de/publications/Publ-26647-1
https://www.hzdr.de/publications/Publ-26647-1