Zobrazeno 1 - 10
of 101
pro vyhledávání: '"W. A. Radford"'
Publikováno v:
Journal of Electronic Materials. 44:2977-2980
Dark current density data recorded over the past 14 years at Raytheon Vision Systems on short-wavelength infrared (SWIR) and medium-wavelength infrared (MWIR) devices were examined. This included HgCdTe detector arrays grown by liquid-phase epitaxy o
Publikováno v:
Journal of Electronic Materials. 43:2991-2997
HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for o
Autor:
Scott M. Johnson, Kelly A. Jones, J. D. Benson, M. Reddy, Jeffrey M. Peterson, W. A. Radford, D. D. Lofgreen
Publikováno v:
Journal of Electronic Materials. 42:3114-3118
HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZn
Autor:
K. R. Olsson, E. A. Patten, D. D. Lofgreen, J. W. Bangs, Jeffrey M. Peterson, Scott M. Johnson, Edward P. Smith, W. A. Radford, J. A. Franklin, Leon Melkonian, M. Reddy, T. Vang, M. F. Vilela
Publikováno v:
Journal of Electronic Materials. 40:1706-1716
This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm × 4 c
Autor:
T. F. Mc Ewan, C. L. Kuzen, Eric T. Hughes, Edward P. Smith, G. M. Venzor, A. M. Gallagher, Roger W. Graham, Thomas Kostrzewa, W. A. Radford, Michael L. Brest, E. A. Patten
Publikováno v:
physica status solidi c. 7:2522-2525
Raytheon Visions Systems (RVS) is furthering its capability to deliver state-of-the-art high performance large format HgCdTe focal plane arrays (FPAs) for dual-band long-wavelength infrared (LWIR) detection. Missile seekers are designed to acquire ta
Autor:
W. A. Radford, Scott M. Johnson, M. Reddy, Jeffrey M. Peterson, D. D. Lofgreen, T. Vang, E. A. Patten
Publikováno v:
Journal of Electronic Materials. 39:974-980
This paper describes molecular-beam epitaxy growth of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) dual-band device structures on large-area (6 cm × 6 cm) CdZnTe substrates. Wafer-level composition and defect mapping techniques
Autor:
E. A. Patten, Jeffrey M. Peterson, Scott M. Johnson, J. W. Bangs, J. A. Franklin, T. Vang, W. A. Radford, D. D. Lofgreen, M. Reddy
Publikováno v:
Journal of Electronic Materials. 38:1764-1770
This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substr
Autor:
W. A. Radford, Jeffrey M. Peterson, Edward P. Smith, Scott M. Johnson, M. Reddy, J. A. Franklin, I. Kasai
Publikováno v:
Journal of Electronic Materials. 35:1283-1286
HgCdTe offers significant advantages over other similar semiconductors, which has made it the most widely utilized variable-gap material in infrared (IR) focal plane array (FPA) technology. HgCdTe hybrid FPAs consisting of two-dimensional detector ar
Autor:
J. B. Varesi, E. A. Patten, P. M. Goetz, Edward P. Smith, Scott M. Johnson, Brett Z. Nosho, J. D. Benson, G. M. Venzor, John A. Roth, W. A. Radford, Andrew J. Stoltz, J. E. Jensen
Publikováno v:
Journal of Electronic Materials. 35:1145-1152
High-performance 20-µm unit-cell two-color detectors using an n-p+-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with midwavelength (MW) infrared and long wa
Autor:
M. D. Newton, M. V. Liguori, Andrew J. Stoltz, W. A. Radford, John H. Dinan, R. E. Bornfreund, J. D. Benson, J. K. Gleason, J. B. Varesi, Scott M. Johnson, G. M. Venzor, Edward P. Smith
Publikováno v:
Journal of Electronic Materials. 34:746-753
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large f