Zobrazeno 1 - 10
of 78
pro vyhledávání: '"W. A. Linhart"'
Publikováno v:
Journal of Materials Chemistry C. 9:13733-13738
The van der Waals material Bi2S3 is a potential solar absorber, but its optoelectronic properties are not fully explored and understood. Here, using theoretical calculations and various experimental techniques under different temperature and hydrosta
Autor:
Thomas J. Featherstone, Aron Walsh, Laurence J. Hardwick, Frank Jäckel, Pardeep K. Thakur, Lee A. Burton, Tim D. Veal, Vin Dhanak, Jack E. N. Swallow, W. M. Linhart, Leanne A. H. Jones, Robert Kudrawiec, Matthew J. Smiles, Jonathan Alaria, Huw Shiel, Nicole Fleck, Jonathan M. Skelton, Philip A. E. Murgatroyd, Tien-Lin Lee
Publikováno v:
Physical Review Materials. 4
The effects of Sn $5s$ lone pairs in the different phases of Sn sulphides are investigated with photoreflectance, hard x-ray photoemission spectroscopy (HAXPES), and density functional theory. Due to the photon energy-dependence of the photoionizatio
Autor:
Rachel Goldman, J. Occena, Jared. W. Mitchell, Wiktor Żuraw, Robert Kudrawiec, Tim Jen, W. M. Linhart
Publikováno v:
Applied Physics Express. 13:091005
Autor:
Jean-Baptiste Rodriguez, O. Delorme, Marcin Syperek, W. M. Linhart, Ernest Rogowicz, Laurent Cerutti, J. Kopaczek, Esperanza Luna, Robert Kudrawiec, Eric Tournié
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, In press, ⟨10.1088/1361-6641/ab6017⟩
Semiconductor Science and Technology, IOP Publishing, In press, ⟨10.1088/1361-6641/ab6017⟩
International audience
Autor:
Max Birkett, Jonathan D. Major, Jonathan Alaria, Jessica L. Stoner, Laurie J. Phillips, Ken Durose, Robert Kudrawiec, Tim D. Veal, W. M. Linhart
Publikováno v:
APL Materials
APL Materials, Vol 6, Iss 8, Pp 084901-084901-8 (2018)
APL Materials, Vol 6, Iss 8, Pp 084901-084901-8 (2018)
The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d7858147ff3b78202403a797b0e52bf
http://livrepository.liverpool.ac.uk/3021760/3/BirkettAPLMat6(2018)084901.pdf
http://livrepository.liverpool.ac.uk/3021760/3/BirkettAPLMat6(2018)084901.pdf
Publikováno v:
Novel Compound Semiconductor Nanowires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70ea16d93501a59b7f17e52521bd611
https://doi.org/10.1201/9781315364407-5
https://doi.org/10.1201/9781315364407-5
Autor:
Wladek Walukiewicz, W. M. Linhart, R. Kudrawiec, M. Wełna, Kin Man Yu, Michal Baranowski, Marie A. Mayer
Publikováno v:
Scientific reports, vol 7, iss 1
Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the ho
Autor:
Kin Man Yu, M. Wełna, Robert Kudrawiec, Tooru Tanaka, W. M. Linhart, Wladek Walukiewicz, Łukasz Janicki
Publikováno v:
Journal of Applied Physics. 126:083106
Interband optical transitions in highly mismatched ZnTe1−xOx and Zn1−yCdyTe1−xOx alloys with Cd content y = 0.1 and 0.32 and oxygen content x
Autor:
Yongqiang Wang, Robert Kudrawiec, T. Jen, E.-M. Pavelescu, W. M. Linhart, Jared. W. Mitchell, Rachel Goldman, J. Occena
Publikováno v:
Applied Physics Letters. 115:082106
We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane
Autor:
W. M. Linhart, L. Janicki, James S. Speck, Robert Kudrawiec, Ian D. Sharp, Wladek Walukiewicz, Oliver Bierwagen, Marie A. Mayer, Soojeong Choi
Publikováno v:
Journal of Applied Physics. 126:045712
Photoreflectance (PR) and microwave-reflectance photoconductivity-decay (μ-PCD) have been applied to study the surface band bending in Mg-doped InN layers with various Mg concentrations (∼1 × 1017 to ∼7 × 1019 cm−3) and thicknesses (∼400 t