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Autor:
W. A. Cuevas-Carrero, L. F. Perez-Mancera, N. R. Burgos, J. J. Moreno-Rubio, E. F. Angarita-Malaver
Publikováno v:
2014 IEEE Central America and Panama Convention (CONCAPAN XXXIV).
A specific design technique of harmonic tuned power amplifiers based on FET device assumption is developed in this paper. The main issue of this methodology is to understand how to access the device's intrinsic drain. Design equations are presented f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d530816af37529f7a0889562cfc14118
https://doi.org/10.1109/concapan.2014.7000427
https://doi.org/10.1109/concapan.2014.7000427
