Zobrazeno 1 - 10 of 221 pro vyhledávání: '"W. A. Bonner"'
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Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station
Autor: C. Marin, W. A. Bonner, A.G. Ostrogorsky, Martin P. Volz, A. Churilov, Thierry Duffar
Publikováno v: Journal of Crystal Growth. 310:364-371
Four Te-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS). Three Te-doped InSb crystals were grown at R =5 mm/h. One crystal was grown at R =3.33 mm/h. The distribution of Te was
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1300d6953399694dd5ef846027c9c787
https://doi.org/10.1016/j.jcrysgro.2007.10.079
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AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates
Autor: A. Torabi, K. C. Hsieh, R. M. Beaudoin, L.-J. Chou, P. S. Lyman, W. A. Bonner, R. A. McTaggart, J. J. Mosca, P. J. Lemonias, William E. Hoke, B. Lent
Publikováno v: Journal of Applied Physics. 82:3576-3580
Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1−xAs (x=0.025–0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f5543096691b7043cb72ca413d939584
https://doi.org/10.1063/1.365676
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6
Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates
Autor: W. A. Bonner, P. S. Lyman, A. Torabi, J. J. Mosca, L.-J. Chou, William E. Hoke, H. T. Hendriks, K. C. Hsieh, B. Lent
Publikováno v: Journal of Applied Physics. 81:968-973
Single and double pulse doped pseudomorphic high electron mobility transistor structures with 110-A-thick InGaAs channel layers have been grown on InxGa1−xAs substrates (x=0.04; 0.065) and GaAs substrates. For In0.23Ga0.77As channel layers, higher
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aad1c99e62a9468cde29cd725f8fe49f
https://doi.org/10.1063/1.364134
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7
Electro-optic potassium-tantalate-niobate films prepared by pulsed laser deposition from segmented pellets
Autor: B. Wilkens, X. D. Wu, S. Yilmaz, Reimund Gerhard-Multhaupt, W. A. Bonner, D. M. Hwang, J. A. Martinez, A. Inam, Thirumalai Venkatesan, T. S. Ravi, Timothy D. Sands
Publikováno v: Journal of Materials Research. 9:1272-1279
Thin films of potassium tantalate niobate (KTN) were prepared by means of pulsed excimer-laser deposition and investigated with a number of analytical techniques, including electrical and electro-optical measurements. For applications in longitudinal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4f9de0d41f8300ccbd5e3610756ca09
https://doi.org/10.1557/jmr.1994.1272
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Histone H2A.X Gene Transcription is Regulated Differently than Transcription of Other Replication-Linked Histone Genes
Autor: D R Pilch, W M Bonner, C Mannironi, C L Hatch, A Orr
Publikováno v: Molecular and Cellular Biology. 13:984-992
Histone H2A.X is a replication-independent histone H2A isoprotein species that is encoded by a transcript alternatively processed at the 3' end to yield two mRNAs: a 0.6-kb mRNA ending with the stem-loop structure characteristic of the mRNAs for repl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c4ce9a399c941a2d7128b6b80ccea7d
https://doi.org/10.1128/mcb.13.2.984-992.1993
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