Zobrazeno 1 - 10
of 122
pro vyhledávání: '"W van Haeringen"'
Autor:
S. Henckens, Bart J. G. Broeckx, H. van Bree, Tim Bosmans, V. Verbeke, Geert Verhoeven, Jimmy Saunders, Dieter Deforce, K. Van Steendam, Frank Coopman, B. Van Ryssen, Ingrid Gielen, W. Van Haeringen, F. Van Nieuwerburgh
Publikováno v:
The Veterinary Journal. 201:378-384
Although the prevalence of canine hip dysplasia (HD) has been the subject of a number of published studies, estimates vary widely. This study evaluated several possible causes for these differences. Sixty Belgian, Dutch and German veterinarians were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41f78d59b91a13671d93d170e5770cac
https://doi.org/10.1016/j.tvjl.2014.05.023
https://doi.org/10.1016/j.tvjl.2014.05.023
Autor:
W. van Haeringen, D. Lenstra
This book gives an account of a number of recent developments in two different subfields of research, optics and micro--electronics. The leading principle in presenting them together in one book is the striking similarity between a variety of notions
Publikováno v:
Philosophical Magazine B. 69:901-910
Plasmon energies are closely related to the complex zeros of the determinant of the dielectric matrix or, equivalently, to the complex poles of the dynamically screened interaction matrix of electronic systems. In this paper we first clarify the true
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d4b1e8ee6b8208b7159e55a2f148f3
https://doi.org/10.1080/01418639408240158
https://doi.org/10.1080/01418639408240158
Autor:
W. van Haeringen, L.J. van IJzendoorn, PA Peter Bobbert, M.J.A. de Voigt, M.F. de Koning, P.W.L. van Dijk
Publikováno v:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 85(1-4), 551-555. Elsevier
Stopping powers for channeled He ions have been calculated with a modified version of the Monte Carlo code LAROSE [J.H. Barrett, Phys. Rev. B 3 (1971) 1527]. The spatial distribution of the valence electron density in Si was obtained from bandstructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c749f7b6c4813610b566d9ffb0c78cc0
https://doi.org/10.1016/0168-583x(94)95881-5
https://doi.org/10.1016/0168-583x(94)95881-5
Autor:
J. P. Cuypers, W. van Haeringen
Publikováno v:
Physical Review B. 47:10310-10318
Connection rules for envelope functions are formulated in terms of a transfer matrix, the elements of which are calculated using a scattering-matrix approach based on empirical pseudopotentials. We propose a 6\ifmmode\times\else\texttimes\fi{}6 trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d38381f82938ba4e506c0e1a46c0c1e4
https://doi.org/10.1103/physrevb.47.10310
https://doi.org/10.1103/physrevb.47.10310
Autor:
J. P. Cuypers, W van Haeringen
Publikováno v:
Journal of Physics: Condensed Matter. 4:2587-2608
A method to calculate electronic wavefunctions and energies in AlGaAs heterostructures is developed and applied to some typical configurations. The method is based on the use of empirical pseudopotentials and the applicability of the flat-band approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90a7611ae90492ecd53730adecf05ed
https://doi.org/10.1088/0953-8984/4/10/021
https://doi.org/10.1088/0953-8984/4/10/021
Autor:
J. P. Cuypers, W. van Haeringen
Publikováno v:
Physical review. B, Condensed matter. 48(15)
Connection rules for envelope functions related to the Γ- and X-point conduction-band valleys in GaAs/Al(Ga)As systems are formulated in terms of a transfer matrix. The transfer-matrix elements are calculated using a method in which wave functions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e26c3c53b7c421da7322c77a73e8cf5
https://pubmed.ncbi.nlm.nih.gov/10007475
https://pubmed.ncbi.nlm.nih.gov/10007475
Publikováno v:
Physical review. B, Condensed matter. 45(16)
As a continuation of earlier work, we present the results of a local-density-approximation-based calculation of some dielectric properties of silicon. In particular, we have calculated the plasmon-resonance line shape for k\ensuremath{\rightarrow}0 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c12dd3f82b9295decfa6151ea0be56b
https://pubmed.ncbi.nlm.nih.gov/10000757
https://pubmed.ncbi.nlm.nih.gov/10000757
Publikováno v:
Physical review. B, Condensed matter. 44(24)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c8cf8994581f4f44f5c0fc5bffae052
https://pubmed.ncbi.nlm.nih.gov/9999537
https://pubmed.ncbi.nlm.nih.gov/9999537
Publikováno v:
Physical review. B, Condensed matter. 43(2)
L'exactitude de l'approximation GW est etudiee en evaluant les contributions du plus bas ordre du vertex a la bande interdite d'energie des semiconducteurs covalents. Une analyse des differentes contributions diagrammatiques montre qu'il y a deux pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f528f0977b5f1cfcd0cd2c8365fe3adf
https://pubmed.ncbi.nlm.nih.gov/9997449
https://pubmed.ncbi.nlm.nih.gov/9997449