Zobrazeno 1 - 10
of 182
pro vyhledávání: '"W V Lundin"'
Autor:
A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Semiconductors. 55:S49-S53
Autor:
W. V. Lundin, Pavel N. Brunkov, E. E. Zavarin, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 46:1211-1214
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures
Autor:
W. V. Lundin, Andrey E. Nikolaev, A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, A. V. Sakharov
Publikováno v:
Technical Physics Letters. 46:991-995
Two buffer structures based on AlxGa1 – xN solutions with silicon doping and without it have been studied by transmission electron microscopy. The structures have been grown on silicon substrates with the (111) orientation by metalorganic vapor-pha
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Autor:
Valery Yu. Davydov, Alexander N. Smirnov, Mikhail B. Smirnov, I. A. Eliseyev, V. N. Jmerik, T. V. Shubina, Yuri E. Kitaev, W. V. Lundin, Evgenii M. Roginskii, Markus Pristovsek, Dmitrii V. Nechaev, Eugene E Zavarin
Publikováno v:
Nanomaterials
Volume 11
Issue 9
Nanomaterials, Vol 11, Iss 2396, p 2396 (2021)
Volume 11
Issue 9
Nanomaterials, Vol 11, Iss 2396, p 2396 (2021)
We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp inter
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, A. F. Tsatsul’nikov, W. V. Lundin, G. V. Voznyuk, M. A. Kaliteevski, S. N. Rodin
Publikováno v:
Semiconductors. 54:1682-1684
A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Autor:
G. V. Voznyuk, M. I. Mitrofanov, W. V. Lundin, A. F. Tsatsul’nikov, V. P. Evtikhiev, S. N. Rodin
Publikováno v:
Semiconductors. 53:2100-2102
The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.
Autor:
A. V. Sakharov, V. P. Evtikhiev, M. I. Mitrofanov, W. V. Lundin, G. V. Voznyuk, I. V. Levitskii, S. N. Rodin, A. F. Tsatsul’nikov
Publikováno v:
Semiconductors. 53:2118-2120
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei a