Výsledky vyhledávání - "W T Wenckebach"

Sequential detection technique to measure the shape of short THz pulses in the presence of a large jitter in the trigger signal

Autor: W. T. Wenckebach, R. W. van Es, Ekkehard Schomburg, J. N. Hovenier, A.F.G. van der Meer, Florian Klappenberger, Guido Knippels, Stephan Winnerl, Tjeerd O. Klaassen, M. Kratschmer

Publikováno v: IEE Proceedings - Optoelectronics. 149:99-104

The possibilities and restrictions for the use of the simple experimental method differential electronic gating (DEG)-developed to determine the shape of repetitive subnanosecond THz pulses in the presence of a large jitter in the trigger signal are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26b7e4c181e62ce6298cd8764cc2112b
https://doi.org/10.1049/ip-opt:20020260

Zobrazit plný text záznamu

A Monte Carlo simulation of mode-locked hot-hole laser operation

Autor: J.G.S. Lok, R C Strijbos, W T Wenckebach

Publikováno v: Journal of Physics: Condensed Matter. 6:7461-7468

We propose a method to achieve mode-locking in a p-germanium inter-valence-band laser by modulating its gain. This is done by applying an additional radiofrequency (RF) electric field parallel to the applied magnetic field. Due to the acceleration by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1102fedf834810793375943399c5649a
https://doi.org/10.1088/0953-8984/6/36/025

Zobrazit plný text záznamu

The Solid Effect

Autor: W. T. Wenckebach

Publikováno v: Applied Magnetic Resonance. 34

The present paper presents a tutorial on the solid effect (SE) as a mechanism for dynamic nuclear polarization (DNP). DNP is a method to orient nuclear spins in a solid. For this purpose, this solid is doped with a small amount of unpaired electron s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc0fcf64b45651c8290d58d45b5f4c04
https://doi.org/10.1007/s00723-008-0121-9

Zobrazit plný text záznamu

Effects of sample shape in p-Ge 'hot-hole' lasers

Autor: J.G.S. Lok, R C Strijbos, S I Schets, J E Dijkstra, W T Wenckebach

Publikováno v: Semiconductor Science and Technology. 9:648-650

The efficiency of p-Ge hot-hole lasers is shown to depend on the shape of the sample. This is due to the inhomogeneity of the electric field caused by the Hall effect. To estimate the effect on gain, Monte Carlo (MC) simulations are performed for the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2312d9df3f1c06741798513c9bfe5db9
https://doi.org/10.1088/0268-1242/9/5s/067

Zobrazit plný text záznamu

Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers

Autor: Raymond N. Schouten, R.C. Strijbos, J. N. Hovenier, Andrei V. Muravjov, W. T. Wenckebach, J. G. S. Lok, S.G. Pavlov, V.N. Shastin, J. H. Blok

Publikováno v: Conference Digest. 15th IEEE International Semiconductor Laser Conference.

The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::09d867bee867973d8bf7bfc5468da9e2
https://doi.org/10.1109/islc.1996.553748

Zobrazit plný text záznamu

The p-Ge terahertz laser-properties under pulsed- and mode-locked operation

Autor: J. Niels Hovenier, Tjeerd O. Klaassen, Andrei V. Muravjov, W. T. Wenckebach, M. Carmen Diez, S.G. Pavlov, V.N. Shastin

Publikováno v: IEEE Transactions on Microwave Theory and Techniques, 48 (4)

The results of a detailed study of the optical output of the p-Ge hot hole terahertz laser for pulsed-locked, as well as for mode-locked operation, is reported in this paper. The recently developed technique to achieve active mode locking is describe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e644add0578360f41677f00ad878bf2a
http://resolver.tudelft.nl/uuid:706ea7bd-3664-4245-a7aa-3cf4ae5b95b2

Zobrazit plný text záznamu

Effects of Space Charge on the Electric Field Distribution in P-Ge Hot Hole Lasers

Autor: Andrei V. Muravjov, R. C. Strijbos, W. T. Wenckebach

Publikováno v: Hot Carriers in Semiconductors ISBN: 9781461380351

The small-signal gain of p-Ge far-infrared lasers (50cm−1 < v < 140cm−1), operated in crossed electric (E = 0.3 − 5kVcm−1) and magnetic (B = 0.3 − 5T) fields at helium temperature, depends strongly on the magnitude and direction of the elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1da029a8b32ddce41d9aa177148cbd8
https://doi.org/10.1007/978-1-4613-0401-2_144

Zobrazit plný text záznamu