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of 1 576
pro vyhledávání: '"W Schlapp"'
Publikováno v:
The British Medical Journal, 1966 Oct . 2(5519), 956-957.
Externí odkaz:
https://www.jstor.org/stable/25409657
Akademický článek
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Publikováno v:
Nature; August 1946, Vol. 158 Issue: 4008 p264-265, 2p
Publikováno v:
Journal of Crystal Growth. :1120-1125
Using solid-source MBE, strain-balanced quaternary AlGaInAs/AlGaInAs multiple quantum well (MQW) strucures have been grown and studied by photoluminescence (PL) and X-ray diffraction (XRD) measurements, showing high epitaxial quality and excellent ho
Autor:
Ronald Meisels, B. D. McCombe, I. Kulac, W. Schlapp, Friedemar Kuchar, G. Weimann, G. Sundaram
Publikováno v:
Surface Science. :55-58
We have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured a
Autor:
C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp, L. Bartholomäus, M. Blöcker, A. Linke, R Losch, P. Svoboda, M. Cukr, Thomas Weimann, F. J. Ahlers
Publikováno v:
Semiconductor Science and Technology. 11:89-95
We investigated the local potential distribution over gated double-bridge structures patterned on GaAs/GaAlAs heterostructures. The current and potential distribution over the gated double-bridge devices was measured for several sets of filling facto
Autor:
J. Kuhn, R. Lösch, Heinz Schweizer, Hartmut Hillmer, W. Schlapp, F. Scholz, H. Bolay, C. Kaden, V. Hofsäß, Volker Härle
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:471-476
We report on the realization of gain coupled distributed feedback (GC-DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy steps to minimize ion straggling. We present
Publikováno v:
Semiconductor Science and Technology. 10:959-964
The current- and temperature-dependent broadening of the resistivity peaks in the region between adjacent quantum Hall plateaus is measured in two different GaAs/AlxGa1-xAs samples. Power law behaviour is found for temperature and current scaling. Co
Autor:
A Mattheus, H. Janning, Herbert Burkhard, S. Hansmann, F. Steinhagen, R G Gobel, Hartmut Hillmer, B Kempf, S. Mohrdiek, R. Lösch, W. Schlapp, H. Walter, H Scholl
Publikováno v:
Pure and Applied Optics: Journal of the European Optical Society Part A. 4:409-415
We have investigated the injection-locking (IL) technique as a useful tool to substantially reduce the chirp of directly modulated semiconductor lasers in standard fibre transmission systems. Chirpless transmission is presented for Fabry-Perot, bulk
Autor:
W. Schlapp, Thomas Prohaska, Gernot Friedbacher, Rainer Loesch, Heinrich. Nickel, Manfred Grasserbauer
Publikováno v:
Analytical Chemistry. 67:1530-1535
In this paper we describe the analytical benefits of in situ preparation and imaging under inert and reactive media using an AlGaAs/GaAs superlattice structure as a well-defined model sample. Imaging under inert organic liquids like toluene has been