Zobrazeno 1 - 10
of 66
pro vyhledávání: '"W R, Clarke"'
Autor:
Michelle Y. Simmons, Craig M. Polley, David L. Jaeger, Jill A. Miwa, Richard F. Reidy, Justin W. Wells, W. R. Clarke, Maia Bischof, Giordano Scappucci, Brian P. Gorman
Publikováno v:
ACS Nano. 7:5499-5505
Low resistivity, near-surface doping in silicon represents a formidable challenge for both the microelectronics industry and future quantum electronic devices. Here we employ an ultra-high vacuum strategy to create highly abrupt doping profiles in si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baa4ea643fe65bb036ad4db1739c7b7c
https://doi.org/10.1021/nn4016407
https://doi.org/10.1021/nn4016407
Publikováno v:
Journal of Crystal Growth. 312:3247-3250
We investigate the optimal encapsulation conditions for obtaining fully activated, double δ-layersδ-layers of phosphorus in silicon. Using scanning tunneling microscopy and low-temperature magnetotransport we have explored whether it is important t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e20a29345d1ad6c4bc3c7097ceac0d
https://doi.org/10.1016/j.jcrysgro.2010.08.003
https://doi.org/10.1016/j.jcrysgro.2010.08.003
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:1180-1183
We use scanning tunneling microscopy and low temperature magnetotransport measurements to study the effect of encapsulation temperature on phosphorus δ -layers in silicon. In particular we examine the quality of the resultant surface after encapsula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97eb6b9faf6c0d4237de0fb7da6a12de
https://doi.org/10.1016/j.physe.2009.11.111
https://doi.org/10.1016/j.physe.2009.11.111
Autor:
Koji Muraki, David A. Ritchie, Alex R. Hamilton, Adam P. Micolich, Michael Pepper, C. E. Yasin, Michelle Y. Simmons, Yoshiro Hirayama, W. R. Clarke
Publikováno v:
Nature Physics. 4:55-59
Two-dimensional (2D) electronic systems can exhibit dramatic drops in resistivity, ρx x, as the temperature T→0, which has renewed debate as to whether 2D systems may have a metallic ground state. The metallic behaviour is only observed in low-dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d495a3d47565cf208f6c01438ffb1c47
https://doi.org/10.1038/nphys757
https://doi.org/10.1038/nphys757
Autor:
Koji Muraki, Alex R. Hamilton, Adam P. Micolich, Yoshiro Hirayama, Michelle Y. Simmons, W. R. Clarke
Publikováno v:
Microelectronics Journal. 36:327-330
We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs–AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5279e4309cb7e315a5ccadb0fd5fe004
https://doi.org/10.1016/j.mejo.2005.02.073
https://doi.org/10.1016/j.mejo.2005.02.073
Autor:
Michael Pepper, Michelle Y. Simmons, Alex R. Hamilton, Adam P. Micolich, D. A. Ritchie, W. R. Clarke
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 22:40-43
We study the stability of the bilayer νtot=1 quantum Hall (QH) state in a high mobility bilayer hole sample as carriers are transferred from one layer to the other while maintaining a constant total carrier density. For a total carrier density n tot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e638baadca9c1f4ee51e3e899b8ce8e4
https://doi.org/10.1016/j.physe.2003.11.211
https://doi.org/10.1016/j.physe.2003.11.211
Autor:
B. P. Yawn, E. J. Roth, D. Krotoski, B. Ansel, G. D. Fischbach, H. D. Sigmon, W. B. Jonas, D. Heppel, R. M. Ruff, J. H. Ferguson, John D. Corrigan, M. E. Cheung, Allen W. Heinemann, M. Coopey, J. M. Whalen, V. W. Pinn, B. D. Jordan, W. T. Greenough, David J. Thurman, J. M. Eisenberg, M. Ylvisaker, M. A. Riddle, K. N. Simpson, S. M. Tuel, J. S. Kreutzer, W. R. Clarke, M. M. Seltzer, S. E. Hyman, Kristjan T. Ragnarsson, B. E. Wexler, T. S. Lawrence, G. Cheung, C. R. Sherman, J F Jr Batley, William H. Hall, A. Salazar, S. L. Garber, M. V. Johnston, B. Vitiello, J. F. Kraus, D. N. Cope, C. E. Henderson, J. P. Koplan, J. R. Daling, J. Banja, C. F. Gustafson, B. Therrien, P. A. Grady, Kenneth J. Ottenbacher, J. M. Elliott, Mitchell Rosenthal, M. J. Fuhrer, J. Whyte, George P. Prigatano, D. D. Cardenas, G. A. Zitnay, D. Alexander, R. M. Chesnut, G. DeJong, H. S. Levin, D. T. Stuss, A. L. Holland, T. M. Rankin, J. T. Povlishock, J. C. Parker, D. Lehmkuhl, Tracy K. McIntosh
Publikováno v:
JAMA: The Journal of the American Medical Association. 282:974-983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac88b0816f028c81cf3e370e9c2b029
https://doi.org/10.1001/jama.282.10.974
https://doi.org/10.1001/jama.282.10.974
Autor:
Andreas Fuhrer, Thilo Reusch, Michelle Y. Simmons, W. R. Clarke, Craig M. Polley, D.L. Thompson, Xiaojing Zhou
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:2131-2133
We use a four-probe scanning tunneling microscope to electrically characterize a Si(100)2 x 1 surface, doped with phosphorus. In order to obtain the 2 × 1 surface reconstruction, the sample is flashed to a temperature of ∼1100 °C, which is well a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ef63d9ddde4038447ceda3fc570a64
https://doi.org/10.1016/j.physe.2007.10.032
https://doi.org/10.1016/j.physe.2007.10.032
Autor:
R. Danneau, Alex R. Hamilton, David A. Ritchie, Michael Pepper, Adam P. Micolich, W. R. Clarke, Oleh Klochan, Michelle Y. Simmons, L. H. Ho
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1501-1503
We report a study of the anomalous conductance plateau around 0.7(2e(2)/h) and the zero-bias anomaly in ballistic one-dimensional (1D) hole systems. In-plane magnetic field B applied to the 1D system shows a clear anisotropic behavior of the 0.7 stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7780b259651bf0ece1ce9a3f63e2cc1d
https://doi.org/10.1016/j.physe.2007.09.152
https://doi.org/10.1016/j.physe.2007.09.152
Autor:
Koji Muraki, W. R. Clarke, Alex R. Hamilton, Yoshiro Hirayama, Michelle Y. Simmons, C. E. Yasin, Michael Pepper, David A. Ritchie, Adam P. Micolich
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1599-1601
We compare directly the metallic behavior of high-quality, two-dimensional hole systems (2DHSs) in two GaAs device structures-one dominated by short-range disorder and the other by long-range disorder. We find that the type of disorder strongly affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e036af6879b02de2a3952eed84ff07
https://doi.org/10.1016/j.physe.2007.09.179
https://doi.org/10.1016/j.physe.2007.09.179