Zobrazeno 1 - 10
of 50
pro vyhledávání: '"W M J, Green"'
Publikováno v:
Optics express. 30(5)
We report a design methodology for creating high-performance photonic crystals with arbitrary geometric shapes. This design approach enables the inclusion of subwavelength shapes into the photonic crystal unit cell, synergistically combining metamate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c844591a04117a9bf5e0561da8fb6c2
https://pubmed.ncbi.nlm.nih.gov/35299519
https://pubmed.ncbi.nlm.nih.gov/35299519
Publikováno v:
Conference on Lasers and Electro-Optics.
Going beyond the limited design freedoms of traditional photonic crystals, we experimentally show how photonic metacrystals exploit the inclusion of subwavelength dielectric scatterers in the unit cell to deterministically modify k-space and real spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb4b2a951ae2184722b9c640071d5b5
https://doi.org/10.1364/cleo_si.2022.sm3h.6
https://doi.org/10.1364/cleo_si.2022.sm3h.6
Autor:
B.J. Offrein, Kate McLean, Jason S. Orcutt, Marwan H. Khater, B. Porth, Folkert Horst, Chi Xiong, Robert K. Leidy, Edward W. Kiewra, Karen Nummy, D. M. Gill, Jessie Rosenberg, N. B. Feilchenfeld, Wilfried Haensch, Giewont Kenneth J, F. G. Anderson, Andy Stricker, Tymon Barwicz, Yves Martin, W. M. J. Green, Charles A. Whiting
Publikováno v:
ECOC
Monolithic silicon photonic technology provides high bandwidth and large volume for datacom applications, while maintaining the low-cost assembly and waferscale test readiness characteristic of CMOS. Monolithic integration and high-yield CMOS process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97581761435b7980c8226b5f0ce8b689
https://doi.org/10.1109/ecoc.2017.8346134
https://doi.org/10.1109/ecoc.2017.8346134
Autor:
D. Van Thourhout, Shahram Keyvaninia, Yurii A. Vlasov, Gunther Roelkens, M. Tassaert, W. M. J. Green
Publikováno v:
OPTICAL AND QUANTUM ELECTRONICS
A small footprint integrated optical amplifier on Silicon-on-insulator is proposed in this article. By choosing to use optical pumping to drive the device, electrical contacting is avoided and the active waveguide can be made as thin as 100 nm, maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8eae9d494210e2e57d4eb4ffddb92ee5
https://doi.org/10.1007/s11082-012-9568-x
https://doi.org/10.1007/s11082-012-9568-x
Autor:
Xiaoping Liu, Roel Baets, Eric Tournié, Bart Kuyken, Nannicha Hattasan, Richard M. Osgood, Jean-Baptiste Rodriguez, W. M. J. Green, Alban Gassenq, Laurent Cerutti, Gunther Roelkens
Publikováno v:
IEEE Journal of Quantum Electronics. 48:292-298
In this paper, we review our work on III-V/SOI photonic integrated circuits for short-wave infrared applications. We focus on the integration of short-wave infrared photodetectors on a silicon photonics platform and on the generation of a short-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3702346db7832f20cecf1fab04a5a69
https://doi.org/10.1109/jqe.2011.2178090
https://doi.org/10.1109/jqe.2011.2178090
Autor:
Christopher V. Jahnes, Min Yang, Jeffrey A. Kash, J. Van Campenhout, Fuad E. Doany, B. G. Lee, Solomon Assefa, Yurii A. Vlasov, W. M. J. Green, Clint L. Schow, Alexander V. Rylyakov
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:345-354
This paper describes the design and measured performance of three different silicon photonic switches: a 2×2 switch, a 1×2 switch, and a 4×4 switch. All of the devices have been hybrid integrated with a corresponding custom 90-nm CMOS driver. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4d677fbb5c043aa8e7fa2f04db0cf7
https://doi.org/10.1109/jssc.2011.2170638
https://doi.org/10.1109/jssc.2011.2170638
Autor:
Christopher V. Jahnes, Jeffrey A. Kash, W. M. J. Green, Min Yang, Yurii A. Vlasov, Fuad E. Doany, Alexander V. Rylyakov, J. Van Campenhout, B. G. Lee, Clint L. Schow, Solomon Assefa, Richard A. John
Publikováno v:
Journal of Lightwave Technology. 29:1136-1142
A custom 90-nm bulk digital CMOS switch driver is codesigned and integrated with a silicon photonic switch. A photonic device model is created within the electronic design environment, facilitating driver optimization and performance evaluation prior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5898604f3468f53c80c3713b57fdd8f6
https://doi.org/10.1109/jlt.2011.2119393
https://doi.org/10.1109/jlt.2011.2119393
Autor:
Gary M. Carter, YA Vlasov, W. Astar, Richard M. Osgood, Xiaoping Liu, Jerry I. Dadap, Jeffrey B. Driscoll, W. M. J. Green
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 16:234-249
All-optical format conversion of 10 Gb/s non-return-to-zero on-off keying (NRZ-OOK) to RZ-OOK has been successfully achieved, for the first time to our knowledge, utilizing either cross-phase modulation (XPM) or four-wave mixing (FWM), in a Silicon (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9d6a200ecbf16237c3865a82f40601
https://doi.org/10.1109/jstqe.2009.2029872
https://doi.org/10.1109/jstqe.2009.2029872
Autor:
Mounir Meghelli, Marwan H. Khater, Edward W. Kiewra, F. Horst, W. M. J. Green, Jessie Rosenberg, D. M. Gill, N. B. Feilchenfeld, Christian W. Baks, F. G. Anderson, Yves Martin, B.J. Offrein, Jonathan E. Proesel, Frank R. Libsch, Chi Xiong, Wilfried Haensch, Wesley D. Sacher, John J. Ellis-Monaghan, Jens Hofrichter, Andreas D. Stricker, Jason S. Orcutt, Tymon Barwicz, Ankur Agrawal
Publikováno v:
OFC
Monolithic CMOS photonics seeks to minimize total transceiver cost by simplifying packaging, design and test. Here we examine 25 Gb/s applications in the context of integrated transistor performance and demonstrate a 4λ×25 Gb/s reference design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8745224ca433ca21b29fc95c2ef7e995
https://doi.org/10.1364/ofc.2016.th4h.1
https://doi.org/10.1364/ofc.2016.th4h.1
Autor:
Charles A. Whiting, Thai Doan, Jessie Rosenberg, Yves Martin, Natalie B. Feilchenfeld, Robert K. Leidy, Carol Reinholm, John J. Ellis-Monaghan, Fuad E. Doany, Tymon Barwicz, D. M. Gill, Wilfried Haensch, Sebastian Engelmann, Marwan H. Khater, Steven M. Shank, Ankur Agrawal, Mounir Meghelli, J. Ferrario, B.J. Offrein, Christian W. Baks, B. Cucci, Jeffrey C. Maling, Eric A. Joseph, Christa R. Willets, Jason S. Orcutt, S. Chilstedt, Edward W. Kiewra, Chi Xiong, Y. Ding, F. Baker, Jens Hofrichter, Frederick G. Anderson, Dinh Dang, Jonathan E. Proesel, Crystal M. Hedges, Frank R. Libsch, M. Nicewicz, Michael S. Gordon, Xiaowei Tian, Bruce W. Porth, K. McLean, W. M. J. Green, Wesley D. Sacher, Andreas D. Stricker, Folkert Horst
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4752de579ffe16728698630b20782bd
https://doi.org/10.1109/iedm.2015.7409768
https://doi.org/10.1109/iedm.2015.7409768