Zobrazeno 1 - 10
of 134
pro vyhledávání: '"W H Wright"'
Autor:
G. S. Nelson, W. L. Paraense, H. F. HsÜ, P. Jordan, Y. Komiya, F. S. Barbosa, J. Gillet, Mariya Farooq, G. Webbe, J. Fraga de Azevedo, N. Ayad, F. S. Mccullough, J. H. S. Gear, W. H. Wright, V. de V. Clarke, R. J. Pitchford
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763ea10ca70d2801a701e2ca0e13a4ae
https://doi.org/10.1159/000393139
https://doi.org/10.1159/000393139
Publikováno v:
Journal of Ultrasound in Medicine. 16:317-324
Autor:
E C, FAUST, W H, WRIGHT
Publikováno v:
The American journal of tropical medicine and hygiene. 26
Autor:
W H, WRIGHT, D B, McMULLEN
Publikováno v:
American journal of hygiene. 45(2)
Autor:
W H, WRIGHT, J, BOZICEVICH
Publikováno v:
American journal of hygiene. 45(2)
Autor:
W H, WRIGHT
Publikováno v:
The Journal of dental medicine. 2(3)
Autor:
W H, WRIGHT
Publikováno v:
American practitioner and digest of treatment. 1(11)
Autor:
Craig R. Nelson, T. Salagaj, Gary S. Tompa, P. L. Anderson, W. H. Wright, R.A. Stall, W. L. Ahlgren, L. Cook, S.M. Johnson
Publikováno v:
Journal of Crystal Growth. 107:198-202
A variety of II–VI compounds, (Hg, Cd, Zn), (Se, Te), have been grown in a vertical MOVPE reactor which incorporates a horizontal wafer carrier which is rotated at high speeds. We report here on the growth system and the materials results.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1167-1170
A spatially resolved characterization technique is described that can separate surface and bulk (Hg,Cd)Te material parameters. Photoconductive (PC) decay and metal–insulator semiconductor (MIS) measurements were used to characterize n‐type (Hg,Cd