Zobrazeno 1 - 10
of 1 767
pro vyhledávání: '"W H, Weber"'
Autor:
Stangl, Alexander1 (AUTHOR) alexander.stangl@gmail.com, Nuns, Nicolas2 (AUTHOR), Pirovano, Caroline2 (AUTHOR), Kreka, Kosova3 (AUTHOR), Chiabrera, Francesco3 (AUTHOR), Tarancón, Albert3,4 (AUTHOR), Burriel, Mónica1 (AUTHOR) monica.burriel@grenoble-inp.fr
Publikováno v:
Small Structures. Nov2024, Vol. 5 Issue 11, p1-9. 9p.
Autor:
Binte Shahid, Samiha1 (AUTHOR), Lacey, Forrest G.2,3 (AUTHOR), Wiedinmyer, Christine4 (AUTHOR), Yokelson, Robert J.5 (AUTHOR), Barsanti, Kelley C.1,2 (AUTHOR) barsanti@ucar.edu
Publikováno v:
Geoscientific Model Development. 2024, Vol. 17 Issue 21, p7679-7711. 33p.
Autor:
Boileau James Maurice, Wen Yang, Somnath Ghosh, W. H. Weber, Ann E. O'Neill, Bhaskar Majumdar, Peter A. Gustafson, Stephen J. Harris
Publikováno v:
Journal of Applied Physics. 96:7195-7201
Micro-Raman spectroscopy has been widely used to measure local stresses in silicon and other cubic materials. However, a single (scalar) line position measurement cannot determine the complete stress state unless it has a very simple form such as uni
Publikováno v:
Journal of Physics: Condensed Matter. 12:6725-6734
Using the full-potential linearized augmented-plane-wave (FLAPW) method, the mechanism of the rutile-CaCl2 phase transition of RuO2 and the phase stability of β-PtO2 are investigated. The local density functional calculations predict quantities such
Publikováno v:
Journal of Physics D: Applied Physics. 31:1963-1967
The surface tension of detached liquid drops in pulsed gas metal arc welding was determined in situ from the period of the prolate-oblate oscillations initiated by the detachment event. The oscillating drops were imaged by an optical shadowgraph tech
Publikováno v:
Journal of Applied Physics. 84:2011-2017
Low-temperature (∼200 °C) molecular beam epitaxy of Ge-rich Ge1−x−ySiyCx alloys grown on Si(100) have been investigated by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, transmission electron microscopy, Raman
Publikováno v:
Journal of Applied Physics. 83:2820-2825
Silicon-containing amorphous hydrogenated carbon films deposited by a plasma-enhanced chemical vapor deposition process were studied using both Raman and ellipsometry spectroscopies. Analyses of the experimental data from both these techniques yielde
Publikováno v:
Journal of Applied Physics. 82:3287-3296
Low-temperature (∼200 °C) molecular beam epitaxy of Ge1−xCx alloys grown on Si(100) have been extensively investigated by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, transmission electron microscopy, and Raman
Publikováno v:
Applied Spectroscopy. 51:123-129
We demonstrate the use of Raman microscopy for leak detection in hermetically sealed micromachined accelerometers. Leaks were indicated by the presence of a foreign gas, in this case oxygen, in the 70-μm-deep cavity enclosing the accelerometer betwe
Autor:
Figueiredo, Gonçalo1,2 (AUTHOR), Correia, Sandra F. H.3 (AUTHOR) sandracorreia@av.it.pt, Falcão, Bruno P.1 (AUTHOR), Sencadas, Vitor4 (AUTHOR), Fu, Lianshe1 (AUTHOR), André, Paulo S.2 (AUTHOR), Ferreira, Rute A. S.1 (AUTHOR) rferreira@ua.pt
Publikováno v:
Advanced Science. 9/18/2024, Vol. 11 Issue 35, p1-8. 8p.