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pro vyhledávání: '"Wörtche, F."'
Autor:
Icking, E., Banszerus, L., Wörtche, F., Volmer, F., Schmidt, P., Steiner, C., Engels, S., Hesselmann, J., Goldsche, M., Watanabe, K., Taniguchi, T., Volk, C., Beschoten, B., Stampfer, C.
Publikováno v:
Adv. Electron. Mater. 8, 2200510 (2022)
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Be
Externí odkaz:
http://arxiv.org/abs/2206.02057
