Zobrazeno 1 - 10
of 103
pro vyhledávání: '"W, Saitoh"'
Publikováno v:
Applied Surface Science. :832-835
Scanning ion microprobe (SIM) image using a gallium focused ion beam (FIB) is greatly improved in sensitivity by the in-situ implantation of cesium or oxygen ions with the dose of 10 15 –10 17 atoms/cm 2 . When the cesium ions are implanted into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f307defd448c77c500861effd0384b
https://doi.org/10.1016/s0169-4332(02)00836-x
https://doi.org/10.1016/s0169-4332(02)00836-x
Publikováno v:
Solid-State Electronics. 42:1543-1546
Alternative voltage induced across a resonant tunneling diode under the THz radiation, which is an important factor for photon assisted tunneling, is theoretically analyzed in general form. As an application, integration of a small-area resonant tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9ea22f2b75d989bc8383ef0dd59808
https://doi.org/10.1016/s0038-1101(98)00067-7
https://doi.org/10.1016/s0038-1101(98)00067-7
Publikováno v:
Solid-State Electronics. 42:1547-1551
We propose and analyze a channel coupling tunneling field effect transistor with CoSi 2 /Si/CdF 2 /CaF 2 heterostructures lattice-matched to Si substrate. The device consists of two channel layers (CoSi 2 ) separated by a barrier (Si), two gates (CdF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a10fdc8d10243ec37077ff196beb36
https://doi.org/10.1016/s0038-1101(98)00068-9
https://doi.org/10.1016/s0038-1101(98)00068-9
Publikováno v:
Solid-State Electronics. 42:1627-1630
We propose a technique for growing a multilayered superlattice consisting of several monolayers of CaF 2 /CdF 2 on a Si(111) substrate using a partially ionized beam technique at 50°C. This technique should be suitable for use in Si based quantum ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da250b796c5c0c641f23dc7fdb3be80
https://doi.org/10.1016/s0038-1101(98)00083-5
https://doi.org/10.1016/s0038-1101(98)00083-5
Publikováno v:
Surface Science. :209-212
We report on the transfer efficiency of hot electrons with monochromatic energy across a nanometer-thick metal epilayer in a metal(CoSi2)/insulator(CaF2) quantum interference transistor. The transfer efficiency from emitter to collector is estimated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52d9b03da8fa67d56f54cb93c9dc17f
https://doi.org/10.1016/0039-6028(96)00386-x
https://doi.org/10.1016/0039-6028(96)00386-x
Publikováno v:
IEEE Trans. Electron Devices. 42(No. 12):2203-2210
We report on the theoretical and measured characteristics of triple-barrier metal (CoSi/sub 2/)-insulator(CaF/sub 2/) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0909e600b6a9091606891ed4c5b9fdfb
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100669899
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100669899
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:623-628
Metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructures are grown on a Si(111) substrate, and applied to quantum‐effect electron devices. In the epitaxial growth of a CoSi2/CaF2 multilayer, an epitaxial CoSi2 layer on CaF2 was obtained by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0de8808fc52826ae2fb5fbc3a3792a86
https://doi.org/10.1116/1.579796
https://doi.org/10.1116/1.579796
Publikováno v:
Physica B: Condensed Matter. 227:213-215
We report the room-temperature observation of multiple negative differential resistance (NDR) due to quantum interference of hot electrons in a metal (CoSi 2 )/insulator (CaF 2 ) heterstructure. The device for the observation consists of a metal/insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6b34dc54acfde9ecc848e1e9d30fbf8
https://doi.org/10.1016/0921-4526(96)00402-4
https://doi.org/10.1016/0921-4526(96)00402-4
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
A novel low on-resistance Schottky barrier diode (SBD) structure with a p-buried floating layer is proposed and demonstrated by fabricating 300V-SBDs using a burying epitaxial growth technique. The fabricated SBDs realize 50% reduction in chip area a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fa3b21d225c53daba713662d5dc29c
https://doi.org/10.1109/ispsd.2002.1016164
https://doi.org/10.1109/ispsd.2002.1016164
Publikováno v:
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).
35 nm-long metal gate p-MOSFETs with PtSi Schottky source/drain were fabricated on a SIMOX substrate by electron beam lithography and self aligned silicide process and their room temperature operation was demonstrated. The drain current, the transcon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b5998d14dda2c68448fea00ff7b3cd
https://doi.org/10.1109/drc.1999.806313
https://doi.org/10.1109/drc.1999.806313