Zobrazeno 1 - 10
of 642
pro vyhledávání: '"W, Saitoh"'
Autor:
Ščajev, Patrik1 (AUTHOR) patrik.scajev@ff.vu.lt, Prystawko, Paweł2 (AUTHOR) pprysta@unipress.waw.pl, Kucharski, Robert2 (AUTHOR) robert.kucharski@unipress.waw.pl, Kašalynas, Irmantas3,4 (AUTHOR) patrik.scajev@ff.vu.lt
Publikováno v:
Materials (1996-1944). Dec2024, Vol. 17 Issue 23, p5995. 11p.
Autor:
Liu, Yuhan1 (AUTHOR), Zou, Yuhan1 (AUTHOR), Ye, Yangli2 (AUTHOR), Chen, Yong3 (AUTHOR) cheny@sdsmu.edu.cn
Publikováno v:
Cancer Medicine. Nov2024, Vol. 13 Issue 22, p1-13. 13p.
Publikováno v:
Applied Surface Science. :832-835
Scanning ion microprobe (SIM) image using a gallium focused ion beam (FIB) is greatly improved in sensitivity by the in-situ implantation of cesium or oxygen ions with the dose of 10 15 –10 17 atoms/cm 2 . When the cesium ions are implanted into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f307defd448c77c500861effd0384b
https://doi.org/10.1016/s0169-4332(02)00836-x
https://doi.org/10.1016/s0169-4332(02)00836-x
Publikováno v:
Solid-State Electronics. 42:1543-1546
Alternative voltage induced across a resonant tunneling diode under the THz radiation, which is an important factor for photon assisted tunneling, is theoretically analyzed in general form. As an application, integration of a small-area resonant tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9ea22f2b75d989bc8383ef0dd59808
https://doi.org/10.1016/s0038-1101(98)00067-7
https://doi.org/10.1016/s0038-1101(98)00067-7
Publikováno v:
Solid-State Electronics. 42:1547-1551
We propose and analyze a channel coupling tunneling field effect transistor with CoSi 2 /Si/CdF 2 /CaF 2 heterostructures lattice-matched to Si substrate. The device consists of two channel layers (CoSi 2 ) separated by a barrier (Si), two gates (CdF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a10fdc8d10243ec37077ff196beb36
https://doi.org/10.1016/s0038-1101(98)00068-9
https://doi.org/10.1016/s0038-1101(98)00068-9
Publikováno v:
Solid-State Electronics. 42:1627-1630
We propose a technique for growing a multilayered superlattice consisting of several monolayers of CaF 2 /CdF 2 on a Si(111) substrate using a partially ionized beam technique at 50°C. This technique should be suitable for use in Si based quantum ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da250b796c5c0c641f23dc7fdb3be80
https://doi.org/10.1016/s0038-1101(98)00083-5
https://doi.org/10.1016/s0038-1101(98)00083-5
Publikováno v:
Surface Science. :209-212
We report on the transfer efficiency of hot electrons with monochromatic energy across a nanometer-thick metal epilayer in a metal(CoSi2)/insulator(CaF2) quantum interference transistor. The transfer efficiency from emitter to collector is estimated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52d9b03da8fa67d56f54cb93c9dc17f
https://doi.org/10.1016/0039-6028(96)00386-x
https://doi.org/10.1016/0039-6028(96)00386-x
Publikováno v:
IEEE Trans. Electron Devices. 42(No. 12):2203-2210
We report on the theoretical and measured characteristics of triple-barrier metal (CoSi/sub 2/)-insulator(CaF/sub 2/) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0909e600b6a9091606891ed4c5b9fdfb
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100669899
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100669899
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:623-628
Metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructures are grown on a Si(111) substrate, and applied to quantum‐effect electron devices. In the epitaxial growth of a CoSi2/CaF2 multilayer, an epitaxial CoSi2 layer on CaF2 was obtained by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0de8808fc52826ae2fb5fbc3a3792a86
https://doi.org/10.1116/1.579796
https://doi.org/10.1116/1.579796
Autor:
Hanna, Emeline M.1 (AUTHOR), Sargent, Emma1 (AUTHOR), Hua, Chia-ho1 (AUTHOR), Merchant, Thomas E.1 (AUTHOR), Ates, Ozgur1 (AUTHOR) ozgur.ates@stjude.org
Publikováno v:
Scientific Reports. 8/8/2024, Vol. 14 Issue 1, p1-12. 12p.