Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Vytautas Liuolia"'
Autor:
Maxim S. Shatalov, Saulius Marcinkevicius, Remis Gaska, Vytautas Liuolia, Daniel Billingsley, Michael Shur, Jinwei Yang
Publikováno v:
physica status solidi c. 10:853-856
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time-resolved photoluminescence (PL), transient photoreflectance and scanning near-field optical spectroscopy. The large GaN and AlIn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e42fff1a213ed2f11427f9d531f22ca
https://doi.org/10.1002/pssc.201200599
https://doi.org/10.1002/pssc.201200599
Autor:
Vytautas Liuolia, Michael Shur, Remis Gaska, Saulius Marcinkevicius, Jinwei Yang, Andrea Pinos
Publikováno v:
physica status solidi c. 9:1617-1620
Band gap fluctuations and carrier localization in AlxGa1-xN films with x values varying from 0.30 to 0.50 has been studied by scanning near-field optical microscopy (SNOM) by measuring photoluminescence. The measurements have revealed a dual localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fcbb6aa9494c61a7bd167f8f74113f
https://doi.org/10.1002/pssc.201100570
https://doi.org/10.1002/pssc.201100570
Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states
Autor:
Michael Shur, Edmundas Kuokstis, R. Gaska, J. W. Yang, Gintautas Tamulaitis, Vytautas Liuolia, Jūras Mickevičius
Publikováno v:
physica status solidi (a). 207:423-427
InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a compara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa67b2c41ca6a2c14e047213a7f8aa32
https://doi.org/10.1002/pssa.200925227
https://doi.org/10.1002/pssa.200925227
Autor:
Srinivasan Anand, Anders Gustafsson, Naeem Shahid, Shagufta Naureen, Saulius Marcinkevicius, Vytautas Liuolia
We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d77c8fdb2e3a848dd1e771b231133dc
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-117747
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-117747
Autor:
Remis Gaska, Vytautas Liuolia, Daniel Billingsley, Saulius Marcinkevicius, Michael Shur, Maxim S. Shatalov, Jinwei Yang
Publikováno v:
AIP Advances, Vol 2, Iss 4, Pp 042148-042148-7 (2012)
Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f392364472d28467af2a810aa17179f5
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-107880
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-107880
Autor:
Qin Wang, Jan Y. Andersson, Stéphane Junique, Vytautas Liuolia, Sirpa Persson, Saulius Marcinkevicius, Bertrand Noharet, Susan Savage
Publikováno v:
SPIE Proceedings.
We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structures with operation wavelengths ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56cc36cd080df7c519b893a47c56533d
https://doi.org/10.1117/12.808469
https://doi.org/10.1117/12.808469
Autor:
Piotr Perlin, Saulius Miasojedovas, Artūras Žukauskas, Tadeusz Suski, Edmundas Kuokstis, Vytautas Liuolia, Mike Leszczynski, Saulius Jursenas
Publikováno v:
SPIE Proceedings.
On the basis of investigation of photoluminescence (PL) dynamics of highly excited structures with different In content under strong excitation by short laser pulses and comparison with model calculations we analyze emission mechanisms in these In-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3333d2407cf24048342d3ad92d6e9ea6
https://doi.org/10.1117/12.726357
https://doi.org/10.1117/12.726357
Autor:
Daniel Billingsley, Saulius Marcinkevicius, R. Gaska, J. W. Yang, Michael Shur, Maxim S. Shatalov, Vytautas Liuolia
Publikováno v:
Applied Physics Letters. 100:242104
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c333325ae61908cad93f3132ba12df1
https://doi.org/10.1063/1.4729033
https://doi.org/10.1063/1.4729033
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
Publikováno v:
Journal of Applied Physics. 109:113516
Scanning near-field photoluminescence spectroscopy has been applied to evaluate bandgap fluctuations in epitaxial AlGaN films with the AlN molar fraction varying from 0.30 to 0.50. A dual localizat ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::befaf16867be1df4e492ff2a366c3fed
https://doi.org/10.1063/1.3594239
https://doi.org/10.1063/1.3594239
Autor:
You-Da Lin, Shuji Nakamura, Hiroaki Ohta, Vytautas Liuolia, Steven P. DenBaars, Saulius Marcinkevicius
Publikováno v:
Journal of Applied Physics. 108:023101
Spectrally-, polarization-, and time-resolved photoluminescence (PL) experiments have been performed on 2.5 nm thick m-plane single InGaN quantum wells. It has been found that PL decay is mainly de ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b73f4e74529ce243115b81ba6622b2
https://doi.org/10.1063/1.3460278
https://doi.org/10.1063/1.3460278