Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Vytautas GRIVICKAS"'
Publikováno v:
Medžiagotyra, Vol 17, Iss 2, Pp 119-124 (2011)
n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 1017 cm 3, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*1015 cm
Externí odkaz:
https://doaj.org/article/97f8844bf0ef433a874c15012f0be03c
Autor:
A. Schoner, L. Wang, Stephen Sampayan, I. Booker, Paulius Grivickas, Mihail Bora, Hoang T. Nguyen, Lars F. Voss, Kristin Sampayan, Vytautas Grivickas, George J Caporaso, Adam M. Conway, Mikas Vengris, Kipras Redeckas
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific reports, Berlin : Nature research, 2021, vol. 11, iss. 1, art. no. 6859, p. [1-11]
Scientific Reports
Scientific reports, Berlin : Nature research, 2021, vol. 11, iss. 1, art. no. 6859, p. [1-11]
Scientific Reports
Unabated, worldwide trends in CO2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the Unit
Autor:
Vitalijus Bikbajevas, Patrik Ščajev, Vytautas Grivickas, Olga V. Korolik, Alexander V. Mazanik
Publikováno v:
Physical Chemistry Chemical Physics. 21:2102-2114
We report a comprehensive study of the time-resolved photoluminescence (PL), carrier recombination, and carrier diffusion under diverse laser pulse excitation in TlInS2. The 2D-layered crystals were grown by the Bridgman method without or with the pr
Publikováno v:
Lithuanian Journal of Physics. 61
The paper focuses on investigation of the acoustic-optical properties of 2D-TlGaSe2 and GaAs semiconductors using laser pulses. We present the photo-darkening experiments performed by using CW light in spectral ranges below the band gap of TlGaSe2. T
Autor:
M.E. Kazyrevich, Vytautas Grivickas, Patrik Ščajev, Anatoly I. Kulak, М.V. Malashchonak, Eugene A. Streltsov, Alexander V. Mazanik
Publikováno v:
Electrochimica Acta. 290:63-71
Two types of BiOBr thin films with substantially different crystal stacking and photoelectrochemical (PEC) properties were grown on conducting ITO substrates. In the first case, electrophoretically deposited closely-packed layers with parallel arrang
Publikováno v:
Journal of Luminescence. 187:507-512
Intrinsic photoluminescence (PL) of undoped and of B-, Ag- or Er-doped TlInS 2 layered single crystals was investigated by confocal spectroscopy. It is found that position and intensity of PL spectral peak at 2.4 eV is vastly dependent on the excitat
Autor:
Vytautas, Grivickas, Patrik, Ščajev, Vitalijus, Bikbajevas, Olga V, Korolik, Alexander V, Mazanik
Publikováno v:
Physical chemistry chemical physics : PCCP. 21(4)
We report a comprehensive study of the time-resolved photoluminescence (PL), carrier recombination, and carrier diffusion under diverse laser pulse excitation in TlInS2. The 2D-layered crystals were grown by the Bridgman method without or with the pr
Autor:
Adam M. Conway, Vytautas Grivickas, Paulius Grivickas, Lars F. Voss, Alexander V. Mazanik, Olga V. Korolik, Vitalijus Bikbajevas, N. Kazuchits, Patrik Ščajev, S. Lastovskii
Publikováno v:
Applied Physics Letters. 117:242103
Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 1012–1016 cm−2 and annealed at different temperatures up to 1450 °C. Lifetimes and diffusion coefficients are extracted using tw
Autor:
Alexander V. Mazanik, Patrik Ščajev, Liudvikas Subačius, N. Kazuchits, Vitalijus Bikbajevas, Olga V. Korolik, David L. Hall, Lars F. Voss, Adam M. Conway, Mihail Bora, Paulius Grivickas, Vytautas Grivickas
Publikováno v:
Journal of Applied Physics. 127:245707
An optical pump–probe technique was used to detect spatial distribution of carrier lifetimes across the thickness of a high-quality diamond device structure. Two samples with as-received and boron implanted surfaces were compared to assess the role
Autor:
Lars F. Voss, Vytautas Grivickas, David L. Hall, Mihail Bora, Paulius Grivickas, Adam M. Conway, Patrik Ščajev
Publikováno v:
IEEE Electron Device Letters. :1-1
To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen conce