Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Vyacheslav Timofeev"'
Autor:
Vyacheslav Timofeev, Vladimir Mashanov, Alexander Nikiforov, Ilya Skvortsov, Tatyana Gavrilova, Dmitry Gulyaev, Anton Gutakovskii, Igor Chetyrin
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015309-015309-7 (2020)
Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of S
Externí odkaz:
https://doaj.org/article/6463dcc497a844de888e4c1a0ef99ce7
Autor:
Vyacheslav Timofeev, Alexandr Nikiforov, Artur Tuktamyshev, Vladimir Mashanov, Michail Yesin, Aleksey Bloshkin
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been
Externí odkaz:
https://doaj.org/article/8c2423975ed248049413341a2dcf51a9
Autor:
Alexey S. Vasilchenko, Darya V. Poshvina, Mikhail Semenov, Vyacheslav Timofeev, Artyom Stepanov, Arina Pervushina, Anastasia V. Vasilchenko
Pesticides are widely used in agriculture as a pest control strategy. Despite the benefits of pesticides on crop yields, the persistence of chemical residues in soil have an unintended impact on non-targeted microorganisms. In this study, we evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69304e9e718511e5a9f111936be3d3c7
Autor:
A. E. Dolbak, Vyacheslav Timofeev, M. Yu. Esin, Leonid V. Sokolov, O. P. Pchelyakov, A. I. Nikiforov, V. I. Mashanov, A. S. Deryabin
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:470-477
The results of investigating the generation of strained nanoheterostructures based on compounds with materials of group IV (Ge, Si, Sn) are presented. It is established how silver, tin, and lead atoms diffuse over the surface and what temperature dep
Publikováno v:
Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditio
Autor:
A. S. Kozhukhov, I. D. Loshkarev, Vyacheslav Timofeev, Ilya V. Korolkov, O. S. Komkov, A. I. Nikiforov, V. I. Mashanov, Dmitry D. Firsov, D. V. Gulyaev, Vladimir A. Volodin
Publikováno v:
Applied Surface Science. 573:151615
The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp d
Publikováno v:
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
In this paper, the motion of steps S A and S B on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity dependence behavior analysis of reflection high-energy
Autor:
T. A. Gavrilova, Vyacheslav Timofeev, M. Yu. Esin, I. A. Azarov, A. I. Nikiforov, Ilya V. Korolkov, I. D. Loshkarev, V. I. Mashanov
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 276-281
The paper presents the morphological, structural, and optical properties of nanostructured SnO (x) films obtained by molecular beam epitaxy using deposition of tin in an oxygen flux on an oxidized silicon substrate as a function of the annealing temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b99c81f28ae8edfa2eab840aa0b484d
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794757
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794757
Autor:
A. I. Nikiforov, V. I. Mashanov, O. P. Pchelyakov, Vyacheslav Timofeev, A. R. Tuktamyshev, M. Yu. Yesin, I. D. Loshkarev
Publikováno v:
Russian Physics Journal. 60:1864-1870
Nucleation of Ge islands on a stepped Si(100) surface is studied. It is shown by diffraction of fast electrons that at a temperature of 600°C, constant flux of Si, and deposition rate of 0.652 Å/s, a series of the 1×2 superstructure reflections co
Autor:
Michail Yesin, A. I. Nikiforov, Vyacheslav Timofeev, V. I. Mashanov, A. R. Tuktamyshev, A. A. Bloshkin
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Nanoscale Research Letters
Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Nanoscale Research Letters
Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained