Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Votintseva, E."'
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B January 2006 242(1-2):146-148
Autor:
Schmidt, B., Heinig, K.-H., Roentzsch, L., Mücklich, A., Stegemann, K.-H., Votintseva, E., Klimenkov, M.
Publikováno v:
Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Berlin, 04.03.-09.03.2005, 04.-09.03.2005, Berlin, Deutschland
This contribution addresses self-assembling of Si-nanocrystals (NCs) in gate oxides, with special emphasis on size and position tailoring and their application as discrete charge storage centers in nanocrystal memories. The Si NCs for these multi-dot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::7e98223561491cd257df0f01cdee3af3
https://www.hzdr.de/publications/Publ-7650-1
https://www.hzdr.de/publications/Publ-7650-1
Autor:
Uhlig, T., Bemmann, A., Ellmers, C., Furnhammer, F., Gross, M., Hu, Y.H., Liu, J., Ludwig, R.-R., Reinhold, M., Stoisiek, M., Votintseva, E., Wittmaack, M.
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p237-240, 4p
Autor:
Schmidt, B.1 bernd.schmidt@fz-rossendorf.de, Heinig, K.-H.1, Röntzsch, L.1, Müller, T.1, Stegemann, K.-H.2, Votintseva, E.2
Publikováno v:
Nuclear Instruments & Methods in Physics Research Section B. Jan2006, Vol. 242 Issue 1/2, p146-148. 3p.