Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Voss, Paul L."'
Autor:
Ottapilakkal, Vishnu, Juyal, Abhishek, Sundaram, Suresh, Vuong, Phuong, Beck, Collin, Dudeck, Noel L., Bencherif, Amira, Loiseau, Annick, Fossard, Frédéric, Mérot, Jean-Sebastien, Chapron, David, Kauffmann, Thomas H., Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform
Externí odkaz:
http://arxiv.org/abs/2409.04709
Autor:
Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Publikováno v:
Materials Science and Engineering: B, 301, 117185 (2024)
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond
Externí odkaz:
http://arxiv.org/abs/2401.14880
Akademický článek
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Autor:
Gujrati, Rajat, Karrakchou, Soufiane, Oliverio, Lucas, Sundaram, Suresh, Voss, Paul L., Monroy, Eva, Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
In Micro and Nanostructures April 2023 176
Akademický článek
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Autor:
Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, Gmili, Youssef El, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective
Externí odkaz:
http://arxiv.org/abs/1510.04513
Autor:
Puybaret, Renaud, Hankinson, John, Palmer, James, Bouvier, Clement, Ougazzaden, Abdallah, Voss, Paul L, Berger, Claire, de Heer, Walt A
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) m
Externí odkaz:
http://arxiv.org/abs/1307.6197
Autor:
El Huni, Walid, Karrakchou, Soufiane, Halfaya, Yacine, Arif, Muhammad, Jordan, Matthew B., Puybaret, Renaud, Ayari, Taha, Ennakrachi, Houda, Bishop, Chris, Gautier, Simon, Ahaitouf, Ali, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
In Solar Energy 15 September 2019 190:93-103
Autor:
Sundaram, Suresh, Li, Xin, Alam, Saiful, Ayari, Taha, Halfaya, Yacine, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
In Journal of Crystal Growth 1 February 2019 507:352-356
Autor:
Zhang, Zheshen, Voss, Paul L.
We use a quantum-dynamical model to investigate the optical response of graphene under low excitation power. Ultrafast carrier relaxation processes, which play an important role for understanding the optical response of graphene, are included phenome
Externí odkaz:
http://arxiv.org/abs/1106.4838