Zobrazeno 1 - 10 of 186 pro vyhledávání: '"Voss, Paul L"'
1
Report
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Autor: Ottapilakkal, Vishnu, Juyal, Abhishek, Sundaram, Suresh, Vuong, Phuong, Beck, Collin, Dudeck, Noel L., Bencherif, Amira, Loiseau, Annick, Fossard, Frédéric, Mérot, Jean-Sebastien, Chapron, David, Kauffmann, Thomas H., Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform
Externí odkaz: http://arxiv.org/abs/2409.04709
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2
Report
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
Autor: Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Publikováno v: Materials Science and Engineering: B, 301, 117185 (2024)
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond
Externí odkaz: http://arxiv.org/abs/2401.14880
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3
Review
Confrontation and Learned Societies John Voss Paul L. Ward
Autor: Marckwardt, Albert H.
Publikováno v: Language, 1972 Mar 01. 48(1), 243-248.
Externí odkaz: https://www.jstor.org/stable/412513
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4
Akademický článek
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7
Report
Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Autor: Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, Gmili, Youssef El, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective
Externí odkaz: http://arxiv.org/abs/1510.04513
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8
Report
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Autor: Puybaret, Renaud, Hankinson, John, Palmer, James, Bouvier, Clement, Ougazzaden, Abdallah, Voss, Paul L, Berger, Claire, de Heer, Walt A
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) m
Externí odkaz: http://arxiv.org/abs/1307.6197
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