Zobrazeno 1 - 10
of 253
pro vyhledávání: '"Voronine, Dmitri V"'
Autor:
Huynh, Phat K., Nguyen, Dang, Binder, Grace, Ambardar, Sharad, Le, Trung Q., Voronine, Dmitri V.
Recent advances in high-resolution biomedical imaging focusing on morphological, electrical, and biochemical properties of cells and tissues, scaling from cell clusters down to the molecular level, have improved cancer diagnosis. Multiscale imaging r
Externí odkaz:
http://arxiv.org/abs/2304.10085
Autor:
Chanda, Amit, DeTellem, Derick, Pham, Yen Thi Hai, Shoup, Jenae E., Duong, Anh Tuan, Das, Raja, Cho, Sunglae, Voronine, Dmitri V., Trinh, M. Tuan, Arena, Dario A., Witanachchi, Sarath, Srikanth, Hariharan, Phan, Manh-Huong
Understanding impacts of phase transition, phase coexistence, and surface magnetism on the longitudinal spin Seebeck effect (LSSE) in a magnetic system is essential to manipulate the spin to charge current conversion efficiency for spincaloritronic a
Externí odkaz:
http://arxiv.org/abs/2202.07910
Autor:
Gamage, Yasith Indigahawela, Wadumesthri, Yasinthara, Gutiérrez, Humberto Rodríguez, Voronine, Dmitri V., Pan, Jianjun
Publikováno v:
In BBA - Biomembranes October 2024 1866(7)
Autor:
Berweger, Samuel, Zhang, Hanyu, Sahoo, Prasana K., Kupp, Benjamin M., Blackburn, Jeffrey L., Miller, Elisa M., Wallis, T. Mitch, Voronine, Dmitri V., Kabos, Pavel, Nanayakkara, Sanjini U.
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial var
Externí odkaz:
http://arxiv.org/abs/2008.04417
Autor:
Withers, Zachary H, Ambardar, Sharad, Lai, Xiaoyi, Liu, Jiru, Zhukova, Alina, Voronine, Dmitri V
Two-dimensional (2D) materials and heterostructures have recently gained wide attention due to potential applications in optoelectronic devices. However, the optical properties of the heterojunction have not been properly characterized due to the lim
Externí odkaz:
http://arxiv.org/abs/2001.10138
Publikováno v:
Phys. Rev. B 98, 041402 (2018)
Lateral two-dimensional (2D) transitional metal dichalcogenide (TMD) heterostructures have recently attracted a wide attention as promising materials for optoelectronic nanodevices. Due to the nanoscale width of lateral heterojunctions, the study of
Externí odkaz:
http://arxiv.org/abs/1712.02715
Autor:
Xue, Wenjin, Liu, Jiru, Zong, Haonan, Lai, Xiaoyi, Sahoo, Prasana K., Gutierrez, Humberto R., Voronine, Dmitri V.
Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials
Externí odkaz:
http://arxiv.org/abs/1711.11164
Autor:
Liu, Jiru, Xue, Wenjin, Zong, Haonan, Lai, Xiaoyi, Sahoo, Prasana K., Gutierrez, Humberto R., Voronine, Dmitri V.
Two-dimensional monolayer transition metal dichalcogenides (TMDs) have unique optical and electronic properties for applications pertaining to field effect transistors, light emitting diodes, photodetectors, and solar cells. Vertical interfacing of W
Externí odkaz:
http://arxiv.org/abs/1711.11166
Band gap tuning in two-dimensional transitional metal dichalcogenides (TMDs) is crucial in fabricating new optoelectronic devices. High resolution photoluminescence (PL) microscopy is needed for accurate band gap characterization. We performed tip-en
Externí odkaz:
http://arxiv.org/abs/1704.02396
Autor:
Li, Hongyuan, Voronine, Dmitri V.
We report a study of long-range MoS2-substrate interaction using resonant Raman imaging. We observed a strong thickness-dependent peak shift of a Raman-forbidden mode that can be used as a new method of determining the thickness of multilayered MoS2
Externí odkaz:
http://arxiv.org/abs/1612.03354