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of 24
pro vyhledávání: '"Voronenkov, Vladislav"'
Autor:
Voronenkov, Vladislav, Groven, Benjamin, Silva, Henry Medina, Morin, Pierre, De Gendt, Stefan
Publikováno v:
Phys. Status Solidi A 2300943 (2024)
Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical perfo
Externí odkaz:
http://arxiv.org/abs/2311.15007
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory material
Externí odkaz:
http://arxiv.org/abs/1912.11010
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Rebane, Yuri, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri
Publikováno v:
Japanese Journal of Applied Physics 52 (2013) 08JE14
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 cm$^{-2}$ to 100 cm$^{-2}$ were found on the surfaces of the films. Origins of pit formation
Externí odkaz:
http://arxiv.org/abs/1902.06465
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Zubrilov, Andrey, Kogotkov, Viktor, Latyshev, Philipp, Lelikov, Yuri, Leonidov, Andrey, Shreter, Yuri
Publikováno v:
Results in Physics, Volume 13, June 2019, 102233
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
http://arxiv.org/abs/1902.06348
Autor:
Voronenkov, Vladislav, Leonidov, Andrey, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Kogotkov, Viktor, Zubrilov, Andrey, Shreter, Yuri
Publikováno v:
Journal of Physics: Conference Series 1199 (2019) 012004
A free-standing bulk gallium nitride layer with a thickness of 365 $\mu$m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decompo
Externí odkaz:
http://arxiv.org/abs/1902.04672
Publikováno v:
2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus), Saint Petersburg and Moscow, Russia, 2019, pp. 833-837
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced th
Externí odkaz:
http://arxiv.org/abs/1902.03463
Akademický článek
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Akademický článek
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Autor:
Voronenkov, Vladislav, Gorbunov, Ruslan, Tsyuk, Alexander, Latyshev, Philippe, Lelikov, Yuriy, Rebane, Yuriy, Zubrilov, Andrey, Bochkareva, Natalia, Shreter, Yuriy
Publikováno v:
ECS Transactions; April 2011, Vol. 35 Issue: 6 p91-97, 7p
Autor:
Tsyuk, Alexander, Gorbunov, Ruslan, Voronenkov, Vladislav, Lelikov, Yuriy, Latyshev, Philippe, Zubrilov, Andrey, Rebane, Yuriy, Bochkareva, Natalia, Shreter, Yuriy
Publikováno v:
ECS Transactions; April 2011, Vol. 35 Issue: 6 p73-81, 9p