Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Von Haartman, Martin"'
Autor:
von Haartman, Martin
A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise character
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888
Autor:
Isheden, Christian *, Hellström, Per-Erik, von Haartman, Martin, Radamson, Henry H., Östling, Mikael
Publikováno v:
In Materials Science in Semiconductor Processing 2005 8(1):359-362
Autor:
von Haartman, Martin, Östling, Mikael
Publikováno v:
Journal of Applied Physics; 2/1/2007, Vol. 101 Issue 3, p034506-N.PAG, 4p, 5 Graphs
Publikováno v:
Journal of Applied Physics; 10/15/2002, Vol. 92 Issue 8, p4414, 8p, 1 Diagram, 10 Graphs
Publikováno v:
IEEE Transactions on Electron Devices. Apr2006, Vol. 53 Issue 4, p836-843. 8p. 1 Chart, 7 Graphs.
Autor:
Von Haartman, Martin1 mvh@imit.kth.se, Lindgren, Ann-Chatrin1, Helistrom, Per-Erik1, Malm, B. Gunnar1, Shi-Li Zhang, B. Gunnar1, Östling, Mikael1
Publikováno v:
IEEE Transactions on Electron Devices. Dec2003, Vol. 50 Issue 12, p2513-2519. 7p.
Publikováno v:
AIP Conference Proceedings; 2007, Vol. 922 Issue 1, p133-136, 4p, 2 Diagrams, 6 Graphs
Publikováno v:
AIP Conference Proceedings; 2005, Vol. 780 Issue 1, p225-230, 6p
Publikováno v:
Noise in Physical Systems & 1/F Fluctuations: Icnf 2001, Procs of the 16th Intl Conf; 2001, p383-386, 4p