Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Volodymyr Ordynskyy"'
Autor:
Shiuh-Bin Chen, Stefan Dobereiner, Parkson W. Chen, Gerd Scheuring, Karl Sommer, Rik Jonckheere, Kai Peter, Frank Hillmann, Christian Gittinger, Hans-Jürgen Brück, Hans Hartmann, Thomas Schatz, Andrew C. Hourd, Vicky Philipsen, Anthony Grimshaw, Volodymyr Ordynskyy
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
The MueTec advanced CD metrology and review station, operating at the DUV (248nm) wavelength, has been extensively characterised for a number of feature types relevant to advanced (9Onm technology node) reticles. Performance for resolution capability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab41f6bad101df2c8835856fd53fc317
https://doi.org/10.1117/12.515114
https://doi.org/10.1117/12.515114
Autor:
Thomas Schaetz, Shiuh-Bin Chen, Kai Peter, Parkson W. Chen, Frank Hillmann, Karl Sommer, Hans-Jurgen Brueck, Rik Jonckheere, Andrew C. Hourd, Vicky Philipsen, Gerd Scheuring, Volodymyr Ordynskyy
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
A comparison has been made in terms of mask CD linearity measurements between the 2 tool versions of a 248nm based optical CD metrology tool for photomasks, i.e., the high-NA M5k-SWD and the through-pellicle M5k-LWD, as well as to a reticle SEM, i.e.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::596880c7db4199eccdefa2bc1fb56c55
https://doi.org/10.1117/12.515116
https://doi.org/10.1117/12.515116
Autor:
Parkson W. Chen, Hans-Juergen Brueck, Christian Gittinger, Stefan Doebereiner, Gerd Scheuring, Anthony Grimshaw, Thomas Schaetz, Vicky Philipsen, Kai Peter, Shiuh-Bin Chen, Andrew C. Hourd, Hans Hartmann, Frank Hillmann, Volodymyr Ordynskyy, Karl Sommer, Rik Jonckheere
Publikováno v:
SPIE Proceedings.
The new MueTec , an advanced CD metrology and review station operating at DUV (248nm) wavelength, has been extensively characterised in a reticle production environment. Performance data including resolution, measurement repeatability and throughput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efafe10fad0b339e1112991d3e60b5f7
https://doi.org/10.1117/12.468090
https://doi.org/10.1117/12.468090
Autor:
Christian Gittinger, Parkson W. Chen, Hans-Juergen Brueck, Anthony Grimshaw, Andrew C. Hourd, Hans Hartmann, Thomas Schaetz, Rik Jonckheere, Gerd Scheuring, Shiuh-Bin Chen, Volodymyr Ordynskyy, Karl Sommer, Vicky Philipsen
Publikováno v:
SPIE Proceedings.
Critical Dimension fidelity continues to be one of the key driving parameters defining photomask quality and printing performance. The present advanced optical CD metrology systems, operating at i-line, will very soon be challenged as viable tools ow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05462b3013b452e80e85abf21068d589
https://doi.org/10.1117/12.479349
https://doi.org/10.1117/12.479349
Autor:
Karl Sommer, Yair Eran, Thomas Schaetz, Volodymyr Ordynskyy, Thomas Engel, Emanuele Baracchi, Gerald Galan, Corinne Miramond, Martin Verbeek, Roman Liebe, Hans Hartmann, Kai Peter, Hans-Juergen Brueck, Gerd Scheuring
Publikováno v:
SPIE Proceedings.
The reduction of wavelength in optical lithography and the use of enhancement techniques like phase shift technology, optical proximity correction (OPC), or off-axis illumination, lead to new specifications for advanced photomasks: a challenge for co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53fda25805a5bf81d1a71e5c7c1acac6
https://doi.org/10.1117/12.425084
https://doi.org/10.1117/12.425084
Publikováno v:
SPIE Proceedings.
The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93189a814d3416fb47f9b15510a6170
https://doi.org/10.1117/12.377100
https://doi.org/10.1117/12.377100
Autor:
Frederic P. Lalanne, Volodymyr Ordynskyy, Thomas Engel, Emanuele Baracchi, Karl Sommer, Yair Eran, Olivier Maurin, Hans-Juergen Brueck, Thomas Schaetz
Publikováno v:
SPIE Proceedings.
Low-k1 lithography requires enhancement techniques like phase shift and OPC. These techniques impose new and challenging specifications on photomasks. A development to establish means and methods to verify corner rounding, line end shortening, defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e5536feebc0bf76c03b4a4ce8b2c6b
https://doi.org/10.1117/12.373312
https://doi.org/10.1117/12.373312
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.