Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Volodymyr Lukovkin"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 4, Pp 453-456 (2020)
Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3219c311299d1fb45b5731629018cd44
https://doi.org/10.15330/pcss.20.4.453-456
https://doi.org/10.15330/pcss.20.4.453-456
Autor:
Volodymyr Mandzyuk, Volodymyr Hryha, Volodymyr Lukovkin, Andriy Terletsky, Taras Benko, Stepan Novosiadlyi
Publikováno v:
Web of Science
The mathematical Gauss and Pearson models, that qualitatively determine the physical processes of ion doping of acceptor (p) and donor (n) impurities, are used for the simulation of silicon submicron large scale integrated (LSI) structures. Such mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67b6db3d685281d0c7f7476e7cc4f2e4
https://doi.org/10.1109/elnano50318.2020.9088870
https://doi.org/10.1109/elnano50318.2020.9088870
Publikováno v:
ACIT
The mathematical models of frequency properties of operational amplifiers (OAs), formed by submicron combined gallium arsenide and silicon technologies, are presented. This approach considerably increases the dynamic range at voltage, frequency and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3ae39bebb3fdf497215057250aaa0a
https://doi.org/10.1109/acitt.2019.8779868
https://doi.org/10.1109/acitt.2019.8779868