Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Volodymyr K. Malyutenko"'
Autor:
Volodymyr K. Malyutenko
Publikováno v:
SPIE Proceedings.
We present further progress in high-resolution time-resolved thermal imaging of electronic and optoelectronic devices. We show that concurrent multi-spectral mapping of light, emissivity, and heat patterns a single device produces may hold the key of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cca8759978fb88020367e301d382fa2
https://doi.org/10.1117/12.516466
https://doi.org/10.1117/12.516466
Autor:
Volodymyr K. Malyutenko, V. V. Bogatyrenko, Oleg Y. Malyutenko, Donald R. Snyder, August J. Huber, James D. Norman
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e517ba074b1df209dab6fd49176c8bbe
https://doi.org/10.1117/12.512654
https://doi.org/10.1117/12.512654
Autor:
Volodymyr K. Malyutenko
Publikováno v:
SPIE Proceedings.
High spatial resolution infrared (3-5 and 8-12 P VFDQQLQJ PLFURVFRS\ VWXG\ VKRZV WKDW OLJKW DQG KHDW VLJQDWXUHV RIconventional planar light emitting diodes for 3-5 P VSHFWUDO UDQJH InGaAs, InAs, InAsSb) are drastically affected bycurrent crowding eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::451333508c1532e0f23ac8f190845e44
https://doi.org/10.1117/12.462658
https://doi.org/10.1117/12.462658
Publikováno v:
SPIE Proceedings.
Determination of the interstitial oxygen concentration in silicon is one. of important elements of its characterization. In the room temperature interstitial oxygen has an absorption level for the —1 wavelength X=9.05 im Cv = 1106 cm ). This level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2eb97ba83440d8f17428b85938b19be
https://doi.org/10.1117/12.183062
https://doi.org/10.1117/12.183062