Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Volodymyr Dovganyuk"'
Autor:
Ihor Fodchuk, Ivan Hutsuliak, Volodymyr Dovganyuk, Andrii Kuzmin, Yurii Roman, Mykola Solodkyi, Pavlo Pynuk, Petro Lytvyn, Oleksandr Gudymenko, Ihor Syvorotka, Mychailo Barchuk
Publikováno v:
Fifteenth International Conference on Correlation Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e799c9445e76c0a28db2c42743e91a2a
https://doi.org/10.1117/12.2615833
https://doi.org/10.1117/12.2615833
Autor:
Ivan Hutsuliak, O. L. Maslyanchuk, Mykola Solodkyi, Volodymyr Dovganyuk, Yurii Roman, Ruslan Zaplitnyy, Andrii Kuzmin, V. V. Lizunov, I. M. Fodchuk, V. P. Kladko, Vadym Mоlоdkin, Oleksandr Gudymenko
Publikováno v:
Fourteenth International Conference on Correlation Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0cfeaefda8e89c8c9a4c087983cc1b2
https://doi.org/10.1117/12.2553970
https://doi.org/10.1117/12.2553970
Autor:
V. P. Kladko, Oleksandr Sumariuk, Ivan Hutsuliak, I. M. Fodchuk, Ivan Syvorotka, Andrii Kotsyubynskiy, Oleksandr Gudymenko, Volodymyr Dovganyuk, Michael Barchuk
Publikováno v:
Fourteenth International Conference on Correlation Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e38fd1b024123c29db770bcaf7442f
https://doi.org/10.1117/12.2553969
https://doi.org/10.1117/12.2553969
Autor:
E. G. Len, I. M. Fodchuk, V. B. Molodkin, T. P. Vladimirova, T. V. Lytvynchuk, E. V. Kochelab, Volodymyr Dovganyuk, B. V. Sheludchenko, E. N. Kislovskii, S. V. Lizunova, O. V. Reshetnyk, V. P. Kladko, S. I. Olikhovskii
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:523-530
The quantitative diagnostics of complex defect structures in silicon crystals grown by the Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is performed by methods of high-resolution X-ray diffraction. The anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::594b22d0f76fbc8ab591fad92794088b
https://doi.org/10.1134/s1027451013030270
https://doi.org/10.1134/s1027451013030270
Autor:
V. B. Molodkin, O. V. Reshetnyk, Z. Świątek, E. G. Len, S. I. Olikhovskii, Volodymyr Dovganyuk, V. P. Kladko, T. P. Vladimirova, T. V. Lytvynchuk, Ye. M. Kyslovskyy, I. M. Fodchuk, E. V. Kochelab, B. V. Sheludchenko, S. V. Lizunova
Publikováno v:
physica status solidi (a). 208:2552-2557
The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the high-resolution X-ray diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796f96fc3bd08c40624042ae0d1da78a
https://doi.org/10.1002/pssa.201184253
https://doi.org/10.1002/pssa.201184253