Výsledky vyhledávání - "Volnianska, O."

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Green luminescence and calculated optical properties of Cu ions in ZnO

Publikováno v: Journal of Alloys and Compounds, Volume 782, Pages 1024-1030, 2019

There are two characteristic optical transitions associated with Cu ions in ZnO, the 0.72 eV infrared and the 2.86 eV structured green luminescence (SGL). While the former is unambiguously related with the d(Cu2+) intra-shell transition, there is no

Externí odkaz: http://arxiv.org/abs/1911.02826

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Akademický článek

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Magnetic properties of isolated Re ion and Re-Re complex in ZnO studied by GGA +U approach

Autor: Volnianska, O.

Publikováno v: Journal of Magnetism and Magnetic Materials, Volume 441, p. 436-442 (2017)

Magnetic properties of Re substituting for the divalent Zn ions and impurity pairs in wurtzite and zinc blende ZnO are analyzed by employing the Generalized Gradient Approximation with the +U corrections. The +U term applied to d(Zn), p(O), and d(Re)

Externí odkaz: http://arxiv.org/abs/1804.01332

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Periodical

Effect of Cation Cu/Al Ratio and Surface Proximity on the Electronic Structure and Optical Properties of Cu-Rich Cu1+xAl1–xS2–y: A DFT Study

Autor: Volnianska, O., Kłopotowski, Ł.

Publikováno v: The Journal of Physical Chemistry - Part C; October 2024, Vol. 128 Issue: 42 p18039-18050, 12p

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Ag and N acceptors in ZnO: ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen

Autor: Volnianska, O., Boguslawski, P., Kaminska, E.

Efficiency of ZnO doping with Ag and N shallow acceptors, which substitute respectively cations and anions, was investigated. First principles calculations indicate a strong tendency towards formation of nearest neighbor Ag-N pairs and N-Ag-N triangl

Externí odkaz: http://arxiv.org/abs/1111.4955

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High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO: A first principles study

Autor: Volnianska, O., Boguslawski, P.

High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO were analyzed by first principles calculations. The spin-polarized vacancy-induced level is located in the band gap in GaP, ZnO and BeO. In the nitrides, the stronger exchange cou

Externí odkaz: http://arxiv.org/abs/1104.4420

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