Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Volker Hurm"'
Autor:
Volker Hurm, M. Zink, Hermann Massler, M. Riessle, M. Kuri, Tapani Narhi, Michael Schlechtweg, Oliver Ambacher, Rainer Weber, Arnulf Leuther, Axel Tessmann, H.-P. Stulz
Publikováno v:
International Journal of Microwave and Wireless Technologies. 6:215-223
Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8164dfd5e23ab1e2f2fa32b29d4bae
https://doi.org/10.1017/s1759078714000166
https://doi.org/10.1017/s1759078714000166
Autor:
R. Driad, Volker Hurm, A. G. Steffan, H.-G. Bach, Urban Westergren, Jie Li, Colja Schubert, M. Chacinski, R. H. Derksen, R. E. Makon
Publikováno v:
IEEE Communications Magazine. 51:136-144
In 2010, the standard for 100GbE was approved, which specifies the transmission of 100 Gb/s via 4 wavelength channels of 25 Gb/s each. A solution based on a 100 Gb/s single wavelength channel is capable of significant cost reductions should the requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a9f8971bd375e09cbfc5aef1a05159
https://doi.org/10.1109/mcom.2013.6515058
https://doi.org/10.1109/mcom.2013.6515058
Autor:
Axel Tessmann, Oliver Ambacher, Arnulf Leuther, J. Rosenzweig, Rainer Weber, Markus Rosch, Hermann Massler, Volker Hurm, Michael Schlechtweg, M. Kuri, Guiseppe Moschetti, M. Riessle, M. Zink
Publikováno v:
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.
Millimeter- and submillimeter-wave integrated circuits (MMICs and S-MMICs) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented. These circuits use the advanced metamorphic high elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a56151935d26b4d5363ca0550d9da82
https://doi.org/10.1109/gsmm.2016.7500293
https://doi.org/10.1109/gsmm.2016.7500293
Autor:
M. Zink, R. Loesch, Ingmar Kallfass, Matthias Seelmann-Eggebert, Michael Schlechtweg, Arnulf Leuther, Volker Hurm, Hermann Massler, M. Riessle, Oliver Ambacher, Axel Tessmann, M. Kuri
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:2193-2202
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db3cb7b507880537d2f0c64f4bf84b46
https://doi.org/10.1109/jssc.2011.2163212
https://doi.org/10.1109/jssc.2011.2163212
Autor:
H. Walcher, R. Losch, Michael Schlechtweg, R. E. Makon, Volker Hurm, Rachid Driad, J. Rosenzweig
Publikováno v:
IEEE Transactions on Electron Devices. 58:2604-2609
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet). Due to its high speed and high breakdown voltage, the InP double-heterojunction bipolar transistor (DHBT) technology is particularly suited for sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b87e3b0a9f882cb018bfbe5655fcf4e0
https://doi.org/10.1109/ted.2011.2157927
https://doi.org/10.1109/ted.2011.2157927
Autor:
Volker Hurm, M. Chacinski, R. E. Makon, B Stoltz, Andreas G. Steffan, Urban Westergren, Rachid Driad
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 16:1321-1327
Components of a 100 Gb/s transmitter with electrical time-division multiplexing are presented as following: electrical multiplexer, driver amplifier, and large-bandwidth distributed feedback-traveling-wave electro-absorption modulator module. The per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b36bc689eaa037b7312f0328e43f0c82
https://doi.org/10.1109/jstqe.2009.2038239
https://doi.org/10.1109/jstqe.2009.2038239
Autor:
M. Zink, M. Kuri, Oliver Ambacher, M. Riessle, Axel Tessmann, Arnulf Leuther, Rainer Sommer, Ingmar Kallfass, Helmut Essen, Hermann Massler, Alfred Wahlen, Michael Schlechtweg, Volker Hurm
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2194-2205
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae5ffe7f6161ad250e0584e6d9ace463
https://doi.org/10.1109/jssc.2008.2002931
https://doi.org/10.1109/jssc.2008.2002931
Autor:
Volker Hurm, Hermann Massler, M. Riessle, M. Zink, Oliver Ambacher, Sandrine Wagner, H.-P. Stulz, Axel Tessmann, Michael Schlechtweg, M. Kuri, Arnulf Leuther
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5846635bcc01531b9c3d166ff2b97cf
https://doi.org/10.1109/csics.2014.6978532
https://doi.org/10.1109/csics.2014.6978532
Autor:
Michael Schlechtweg, Axel Tessmann, Oliver Ambacher, M. Riessle, H.-P. Stulz, Hermann Massler, Volker Hurm, M. Zink, M. Kuri, Arnulf Leuther
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
A compact WR-1.5 (500-750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 20 nm metamorphic high electron mobility transistors (mHEMTs). The realized six-stage LNA TMIC ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c501ee7f0df431fdaee8ed12f6e18ffe
https://doi.org/10.1109/mwsym.2014.6848456
https://doi.org/10.1109/mwsym.2014.6848456
Autor:
Klaus Köhler, Manfred Berroth, M. Lang, Volker Hurm, G. Kaufel, U. Nowotny, Jo. Schneider, B. Raynor, Axel Hulsmann
A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3μm gate length. First results show a data rate of over 20 Gbit/s at 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e389147a3000aa2f42936dcc1fc92f23
