Zobrazeno 1 - 10
of 148
pro vyhledávání: '"Volker Gottschalch"'
Autor:
Evgeny Krüger, Michael Seifert, Volker Gottschalch, Harald Krautscheid, Claudia S. Schnohr, Silvana Botti, Marius Grundmann, Chris Sturm
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035117-035117-11 (2023)
We report on the excitonic transition energy E0 and spin–orbit split-off energy Δ0 of γ-AgxCu1–xI alloy thin films studied by using reflectivity measurements at temperatures between 20 K and 290 K. The observed bowing behavior of the E0 transit
Externí odkaz:
https://doaj.org/article/bba24bab9f1941589482e039f6ca88b3
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 4, Iss 2, Pp 97-100 (2005)
We present for the first time the local spectral analysis of quantum well laser devices recorded in the near-field region. The distribution of mode spectra along and active region was scanned near-field scanning optical miecroscopy (NSOM). This exper
Externí odkaz:
https://doaj.org/article/8429aaec6fd645c6a46493617402ac45
Autor:
Evgeny Krüger, Volker Gottschalch, Gabriele Benndorf, Ron Hildebrandt, Ana Lucía Pereira, Michael S. Bar, Steffen Blaurock, Stefan Merker, Chris Sturm, Marius Grundmann, Harald Krautscheid
Publikováno v:
physica status solidi (b). 260:2200493
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f374322fe007a0b7c8cf75072ddbb72
https://doi.org/10.1002/pssb.202200493
https://doi.org/10.1002/pssb.202200493
Autor:
Steffen Blaurock, Max Kneiß, Stefan Merker, Marius Grundmann, Harald Krautscheid, Volker Gottschalch, Ulrike Teschner
Publikováno v:
Journal of Crystal Growth. 510:76-84
Improved MOVPE (metalorganic vapor phase epitaxy) growth conditions for the different Ga2O3 phases are reported. The influence of the substrate material, the growth conditions and the variation of precursors on the phase formation was investigated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15794d9a12d01b253ff5446077bb19b
https://doi.org/10.1016/j.jcrysgro.2019.01.018
https://doi.org/10.1016/j.jcrysgro.2019.01.018
Autor:
M. S. Bar, Gabriele Benndorf, Harald Krautscheid, Chris Sturm, Stefan Merker, Susanne Selle, Evgeny Krüger, Volker Gottschalch, Max Kneiß, Thomas Höche, Marius Grundmann, Steffen Blaurock
Publikováno v:
Journal of Crystal Growth. 570:126218
Isolated small crystals and closed epitaxial layers of CuI could be deposited on various substrates by close distance sublimation (CDS). X-ray diffraction measurements and detailed TEM studies revealed phase pure cubic γ-CuI (zincblende structure) l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d5e0bd5a444e10e7bfd6f3cc240337
https://doi.org/10.1016/j.jcrysgro.2021.126218
https://doi.org/10.1016/j.jcrysgro.2021.126218
Autor:
Steffen Blaurock, Marius Grundmann, Volker Gottschalch, Harald Krautscheid, Gabriele Benndorf, Jörg Lenzner
Publikováno v:
Journal of Crystal Growth. 471:21-28
We report the thin film deposition of copper iodide with zincblende type structure (γ-CuI) via metal-organic chemical vapor deposition (MOCVD). Single crystals and thin films of Cu and γ-CuI could be formed on various substrates from cyclopentadien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e5231c2c558e3b982c1efc407d002b
https://doi.org/10.1016/j.jcrysgro.2017.04.033
https://doi.org/10.1016/j.jcrysgro.2017.04.033
Autor:
Volker Gottschalch, Daniel Spemann
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:2069-2073
In this study the boron lattice site location in ternary B x Ga 1− x As and B x Ga 1− x P thin films grown on (0 0 1) GaAs and (0 0 1) GaP, respectively, using low pressure metal-organic vapour-phase epitaxy (MOVPE) with boron concentrations betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7432723568ad1269406e49bb9ffedc67
https://doi.org/10.1016/j.nimb.2010.02.028
https://doi.org/10.1016/j.nimb.2010.02.028
Autor:
Annekatrin Hinkel, Marius Grundmann, Helena Hilmer, Bernd Rheinländer, Volker Gottschalch, Martin Lange, Rüdiger Schmidt-Grund, Chris Sturm, Jesús Zúñiga-Pérez
Publikováno v:
physica status solidi (b). 247:1351-1364
Oxide based Bragg reflector (BR) shells were grown con-formally on various curved micro- and nanostructures by means of plasma-enhanced chemical vapor deposition and pulsed laser deposition. The BR shells on circular-cylindrical shaped glass-rods exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda3c01a5baa381adaa381521dc83cf0
https://doi.org/10.1002/pssb.200945530
https://doi.org/10.1002/pssb.200945530
Publikováno v:
physica status solidi (b). 247:1294-1309
GaAs nanowire (NW) growth was studied by metal-organic vapour phase epitaxy (MOVPE). The vapour-liquid-solid (VLS) mechanism with gold-based alloy particles and the selective-area growth (SAG) mechanism on electron beam lithographically prepared SiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8e245be5642ee54bffa2e99f73325a
https://doi.org/10.1002/pssb.200945495
https://doi.org/10.1002/pssb.200945495