Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density

Autor: Volkan Kursun, Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao

Publikováno v: IEEE Transactions on Circuits and Systems I: Regular Papers. 67:2431-2441

Carbon nanotube field effect transistor (CN-MOSFET) is attractive for the realization of future monolithic three-dimensional (M3D) memory circuits with ultra-high integration density, capacity, efficiency, and speed. However, the yield of each vertic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c56a294ad0fbf217314285dceb6e8756
https://doi.org/10.1109/tcsi.2020.2980074

Low Leakage Clock Tree With Dual-Threshold- Voltage Split Input–Output Repeaters

Autor: Volkan Kursun, Anil Kumar Gundu

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1537-1547

Leakage power consumption of clock distribution networks (CDNs) is an important challenge in modern synchronous integrated circuits with billions of deeply scaled transistors. Multithreshold CMOS technology is commonly used to provide power reduction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf848fe47ff496e3ab1ee3c04c69728a
https://doi.org/10.1109/tvlsi.2019.2902215

Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic

Autor: Weifeng He, Zhigang Mao, Volkan Kursun, Yanan Sun

Publikováno v: Microelectronics Journal. 62:12-20

A new variable strength keeper technique is proposed in this paper for achieving robust, high-speed, and low-leakage dynamic logic gates with carbon nanotube transistors. The strength of keeper is dynamically adjusted depending on the logical state o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f767103e0ff1aad41aa8e741e7e76db
https://doi.org/10.1016/j.mejo.2017.01.010

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections

Autor: Yanan Sun, Jiachen Jiang, Weifeng He, Zhigang Mao, Volkan Kursun

Publikováno v: ASICON

In this paper, a robust monolithic three-dimensional (M3D) 4N4P eight carbon nanotube MOSFETs (8-CN-MOSFET) static random-access memory (SRAM) cell is presented for achieving high integration density with tolerance to the removal of metallic carbon n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ccdde94aa824f5af9037c0d3c1d35578
https://doi.org/10.1109/asicon47005.2019.8983463

Editorial TVLSI Positioning - Continuing and Accelerating an Upward Trajectory

Autor: Houman Homayoun, Koji Nii, Masanori Hashimoto, Mark M. Tehranipoor, Chulwoo Kim, Zhengya Zhang, Bipul C. Paul, Makoto Nagata, Volkan Kursun, Poki Chen, Stacey Weber, Rajiv V. Joshi, Shiro Dosho, Prabhat Mishra, Mircea R. Stan, Massimo Alioto, Pasquale Corsonello, Wei Zhang, Mehran Mozaffari Kermani, Patrick Schaumont, Chun-Huat Heng, Mingoo Seok, Rolf Drechsler, Yao-Wen Chang, Jiang Xu, Marian Verhelst, Mark Zwolinski, Chip-Hong Chang, Andreas Burg, Ruonan Han, Anirban Sengupta, Tughrul Arslan, Paolo Stefano Crovetti, Magdy S. Abadir, Yoonmyung Lee, Yuh-Shyan Hwang, Xiaoqing Wen, Hai Helen Li, Baker Mohammad, Tsung-Yi Ho, Aida Todri-Sanial, Jose Pineda de Gyvez, Jun Zhou, Vasilis F. Pavlidis, Jaydeep Kulkarni, Ioannis Savidis, Tae-Hyoung Kim, Huawei Li, Partha Pratim Pande, Deukhyoun Heo, Tanay Karnik, Valerio Vignoli, Ibrahim Abe M. Elfadel, Meng-Fan Chang, Chirn Chye Boon, Fabio Sebastiano, Ajay Joshi

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 27(2):8629340, 253-280. Institute of Electrical and Electronics Engineers
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, IEEE, 2019, 27 (2), pp.253-280. ⟨10.1109/TVLSI.2018.2886389⟩

International audience; I. VLSI Systems: A Glance Into The Last Decades Since their inception in 1970s, VLSI systems have enabled several new technological capabilities and made them accessible to an unceasingly wider range of users, reaching a scale

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ee61760ce40e10a4045bcb49418f04a
https://research.tue.nl/nl/publications/d242576a-f77f-4bba-a2fe-dd933f503f67