Zobrazeno 1 - 10
of 287
pro vyhledávání: '"Voisin, B."'
Autor:
Voisin, B., Ng, K. S. H., Salfi, J., Usman, M., Wong, J. C., Tankasala, A., Johnson, B. C., McCallum, J. C., Hutin, L., Bertrand, B., Vinet, M., Valanoor, N., Simmons, M. Y., Rahman, R., Hollenberg, L. C. L., Rogge, S.
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the v
Externí odkaz:
http://arxiv.org/abs/2109.08540
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate quantum s
Externí odkaz:
http://arxiv.org/abs/2107.00784
Autor:
Voisin, B., Bocquel, J., Tankasala, A., Usman, M., Salfi, J., Rahman, R., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Nature Communications 11, 6124 (2020)
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes
Externí odkaz:
http://arxiv.org/abs/2105.10931
Autor:
Krauth, F. N., Gorman, S. K., He, Y., Jones, M. T., Macha, P., Kocsis, S., Chua, C., Voisin, B., Rogge, S., Rahman, R., Chung, Y., Simmons, M. Y.
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency
Externí odkaz:
http://arxiv.org/abs/2105.02906
Autor:
Holmes, D., Johnson, B. C., Chua, C., Voisin, B., Kocsis, S., Rubanov, S., Robson, S. G., McCallum, J. C., McCamey, D. R, Rogge, S., Jamieson, D. N.
Publikováno v:
Phys. Rev. Materials 5, 014601 (2021)
Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbatio
Externí odkaz:
http://arxiv.org/abs/2009.08594
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of cen
Externí odkaz:
http://arxiv.org/abs/1706.09981
Autor:
Salfi, J., Voisin, B., Tankasala, A., Bocquel, J., Usman, M., Simmons, M. Y., Hollenberg, L. C. L., Rahman, R., Rogge, S.
Publikováno v:
Phys. Rev. X 8, 031049 (2018)
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactio
Externí odkaz:
http://arxiv.org/abs/1706.09261
Autor:
Voisin, B., Maurand, R., Barraud, S., Vinet, M., Jehl, X., Sanquer, M., Renard, J., De Franceschi, S.
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. He
Externí odkaz:
http://arxiv.org/abs/1511.08003
Autor:
Saraiva, A. L., Salfi, J., Bocquel, J., Voisin, B., Rogge, S., Capaz, Rodrigo B., Calderón, M. J., Koiller, Belita
Publikováno v:
Phys. Rev. B 93, 045303 (2016)
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, re
Externí odkaz:
http://arxiv.org/abs/1508.02772
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent
Externí odkaz:
http://arxiv.org/abs/1501.05042