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pro vyhledávání: '"Voillot, J."'
We evaluate the use of p-type silicon oxide (p-SiOx) dielectric layers as a boron diffusion source for n-type crystalline silicon (c-Si) substrates. The p-SiOx layers grown on n-type c-Si substrates by plasma enhanced chemical vapor deposition using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::8cfed260525a54a6499639bd52662f70
https://publica.fraunhofer.de/handle/publica/246570
https://publica.fraunhofer.de/handle/publica/246570
31st European Photovoltaic Solar Energy Conference and Exhibition; 746-748
In this work, we test the use of boron doped silicon oxide (p-SiOx) layers, as a boron diffusion source to form p+ layers inside crystalline silicon substrates. The p-SiO
In this work, we test the use of boron doped silicon oxide (p-SiOx) layers, as a boron diffusion source to form p+ layers inside crystalline silicon substrates. The p-SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81989188ac816661e114d3f2f58e510
Autor:
Leong A; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Li Y; Department of Electrical and Computer Engineering, Boston University, Boston, MA, 02215, United States., Ruikes TR; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Voillot J; Axorus SAS, Loos, 59120, France., Yuan Y; Department of Electrical and Computer Engineering, Boston University, Boston, MA, 02215, United States., Chen G; Department of Electrical and Computer Engineering, Boston University, Boston, MA, 02215, United States., Facon A; Axorus SAS, Loos, 59120, France., Chhuon CA; Axorus SAS, Loos, 59120, France., Joffrois C; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Tessier G; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Cornebois M; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Dégardin J; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France., Louise J; Axorus SAS, Loos, 59120, France., Cheng JX; Department of Electrical and Computer Engineering and Department of Biomedical Engineering, Boston University, Boston, MA, 02215, United States., Yang C; Department of Electrical and Computer Engineering and Department of Chemistry, Boston University, Boston, MA, 02215, United States., Moulet H; Axorus SAS, Loos, 59120, France., Picaud S; Sorbonne Université, CNRS, INSERM, Institut de la Vision, F-75012 Paris, France.
Publikováno v:
BioRxiv : the preprint server for biology [bioRxiv] 2024 Nov 22. Date of Electronic Publication: 2024 Nov 22.