Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Vogt, Patrick"'
Autor:
Majer, Lena N., Acartürk, Tolga, van Aken, Peter A., Braun, Wolfgang, Camuti, Luca, Eckl-Haese, Johan, Mannhart, Jochen, Onuma, Takeyoshi, Rabinovich, Ksenia S., Schlom, Darrell G., Smink, Sander, Starke, Ulrich, Steele, Jacob, Vogt, Patrick, Wang, Hongguang, Hensling, Felix V. E.
Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The f
Externí odkaz:
http://arxiv.org/abs/2407.17194
Autor:
Williams, Martin S., Alonso-Orts, Manuel, Schowalter, Marco, Karg, Alexander, Raghuvansy, Sushma, McCandless, Jon P., Jena, Debdeep, Rosenauer, Andreas, Eickhoff, Martin, Vogt, Patrick
The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the
Externí odkaz:
http://arxiv.org/abs/2311.12460
Autor:
Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the
Externí odkaz:
http://arxiv.org/abs/2212.12096
Autor:
Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, McCandless, Jonathan P., Park, Jisung, DeLello, Kursti, Muller, David A., Xing, Huili G., Jena, Debdeep, Schlom, Darrell G.
We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This cataly
Externí odkaz:
http://arxiv.org/abs/2112.05022
Autor:
Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.
This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime.
Externí odkaz:
http://arxiv.org/abs/2011.00084
Autor:
Swallow, Jack E. N., Vorwerk, Christian, Mazzolini, Piero, Vogt, Patrick, Bierwagen, Oliver, Karg, Alexander, Eickhoff, Martin, Schörmann, Jörg, Wagner, Markus R., Roberts, Joseph W., Chalker, Paul R., Smiles, Matthew J., Murgatroyd, Philip A. E., Razek, Sara A., Lebens-Higgins, Zachary W., Piper, Louis F. J., Jones, Leanne A. H., Thakur, Pardeep Kumar, Lee, Tien-Lin, Varley, Joel B., Furthmüller, Jürgen, Draxl, Claudia, Veal, Tim D., Regoutz, Anna
Publikováno v:
Chemistry of Materials 32, 8460 2020
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental p
Externí odkaz:
http://arxiv.org/abs/2005.13395
Autor:
Vogt, Patrick
Die vorliegende Arbeit präsentiert eine erste umfassende Wachstumsstudie, und erste quantitative Wachstumsmodelle, von Gruppe-III und IV Oxiden synthetisiert mit sauerstoffplasmaunterstützter Molekularstrahlepitaxie (MBE). Diese entwickelten Modell
Externí odkaz:
http://edoc.hu-berlin.de/18452/18700
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