Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Vo Van Tuyen"'
Publikováno v:
Applied Surface Science. 190:441-444
The influence of different chemical treatments on the electrical behaviour of n- and p-type Al/Si Schottky junctions was studied. A Schottky barrier height of 0.91 eV was achieved on p-type Si probably due to the unpinning of the Fermi-level at the A
Publikováno v:
Solid State Phenomena. :565-568
Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess curren
Publikováno v:
Diffusion and defect data, solid state data. Part B, Solid state phenomena 82-84 (2002): 255.
info:cnr-pdr/source/autori:Horvath Zs.J., Adam M., Godio P., Borionetti G., Szabo I., Gombia E., Van Tuyen V./titolo:Passivation of Al%2FSi interface by chemical treatment: Schottky barrier height and plasma etch induced defects/doi:/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2002/pagina_da:255/pagina_a:/intervallo_pagine:255/volume:82-84
info:cnr-pdr/source/autori:Horvath Zs.J., Adam M., Godio P., Borionetti G., Szabo I., Gombia E., Van Tuyen V./titolo:Passivation of Al%2FSi interface by chemical treatment: Schottky barrier height and plasma etch induced defects/doi:/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2002/pagina_da:255/pagina_a:/intervallo_pagine:255/volume:82-84
Autor:
M.V. Demych, V. P. Makhniy, D. Stifter, László Dózsa, K.S. Ulyanitsky, Istvan Reti, Zs. J. Horváth, Vo Van Tuyen, Paul P. Horley, Helmut Sitter, P. M. Gorley, Janos Balazs
Publikováno v:
Materials Science and Engineering: B. 80:156-159
The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates and CdTe epitaxial layers grown on n + GaAs substrates were studied. The electrical and photoresponse properties depended very strongly on
Autor:
Roberto Mosca, Zs. J. Horváth, Béla Szentpáli, S. Franchi, Paola Frigeri, E. Gombia, A. Bosacchi, D. Pal, Vo Van Tuyen, I. Kalmár
Publikováno v:
Materials Science and Engineering: B. 80:248-251
The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also
Publikováno v:
Materials Science and Engineering: B. 80:257-261
The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting mechanisms. The limits of the I–V characteristics are described. The design of the device is
Autor:
S. Franchi, E. Gombia, Paola Frigeri, Zs. J. Horváth, L Dózsa, Á. Nemcsics, Vo Van Tuyen, B. Pődör, Roberto Mosca
Publikováno v:
Scopus-Elsevier
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well.
Autor:
B. Pődör, Roberto Mosca, T. Mohácsy, Zs. J. Horváth, Paola Frigeri, E. Gombia, László Dózsa, S. Franchi, Vo Van Tuyen
Publikováno v:
Microelectronic Engineering. :85-92
InAs monolayer (QL) and self-aggregated quantum dots (QD) were grown by atomic layer MBE at 460°C on an n-type GaAs-buffer layer and were capped with a 2×10 16 /cm 3 n-type GaAs layer. QDs significantly reduce the capacitance measured at 1 MHz comp
Autor:
Zs. J. Horváth, Gy. Vincze, Béla Pécz, Giorgio Margaritondo, J. Almeida, C. Coluzza, Vo Van Tuyen, Antonio Terrasi, J. Ivanèo
Publikováno v:
Solid-State Electronics. 42:229-233
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and later
Autor:
Cs. Ducso, Roberto Mosca, István Bársony, I. Pintér, Z. S. Makaró, E. Gombia, Vo Van Tuyen, Zs. J. Horváth, M. Ádám
Publikováno v:
Solid-State Electronics. 42:221-228
Current–voltage and capacitance–voltage measurements on Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation of H + and P + ions have been performed in the temperature range of 80–360 K. Schottky barrier heights up to 0