Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Vlastimil Rehacek"'
Autor:
Johann Zehetner, Ivan Hotovy, Vlastimil Rehacek, Ivan Kostic, Miroslav Mikolasek, Dana Seyringer, Fadi Dohnal
Publikováno v:
Micromachines, Vol 15, Iss 9, p 1161 (2024)
Semiconducting metal oxides are widely used for solar cells, photo-catalysis, bio-active materials and gas sensors. Besides the material properties of the semiconductor being used, the specific surface topology of the sensors determines device perfor
Externí odkaz:
https://doaj.org/article/19d3c2a1508e4f118c6d7d0926e686a6
Autor:
Miroslav Mikolasek, Peter Ondrejka, Filip Chymo, Patrik Novak, Ladislav Harmatha, Vlastimil Rehacek, Ivan Hotovy
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 16, Iss 3, Pp 367-373 (2018)
Potentiostatic electrodeposition conducted at various deposition voltages from lactate-stabilized copper sulfate electrolyte was used for preparation of Cu2O layers for Photoelectrochemical (PEC) production of hydrogen. A novel approach based on an a
Externí odkaz:
https://doaj.org/article/eb191ffe5d0d471f8c1463ce50242241
Autor:
Miroslav Mikolášek, Ivan Hotovy, Vlastimil Rehacek, Peter Ondrejka, Ivan Kostic, Lothar Spiess, Martin Kemény
Publikováno v:
Journal of Electrical Engineering. 72:61-65
We present results on very thin NiO films which are able to detect 3 ppm of acetone, toluene and n-butyl acetate in synthetic air and to operate at 300°C. NiO films with 25 and 50 nm thicknesses were prepared by dc reactive magnetron sputtering on a
Autor:
Pavol Michniak, R. Redhammer, Marián Marton, Miroslav Behúl, Vlastimil Rehacek, Andrea Vojs Stanova, Marian Vojs
Publikováno v:
Vacuum. 167:182-188
The optimization of electrode properties is an inseparable part of the analytical process which can highly improve the quality of obtained results in electrochemical sensing methods. This paper investigates the role of doping level, morphology and st
Autor:
Marián Marton, Marian Vojs, Pavol Michniak, Miroslav Behúl, Vlastimil Rehacek, Michal Pifko, Štěpán Stehlík, Alexander Kromka
Publikováno v:
Diamond and Related Materials. 126:109111
Autor:
Vlastimil Rehacek, Filip Chymo, Ivan Hotovy, Ivan Novotny, Juraj Breza, Patrik Novák, Peter Ondrejka, Miroslav Mikolášek, Milan Pavúk, Andrej Vincze
Publikováno v:
Applied Surface Science. 461:196-201
A novel approach based on the application of light irradiation during the electrodeposition is proposed to prepare Cu2O structures for photoelectrochemical water splitting. Potentiostatic deposition of Cu2O layers under irradiation and in the dark wa
Autor:
Juraj Racko, Filip Chymo, M. Tapajna, Vlastimil Rehacek, Karol Fröhlich, Miroslav Mikolášek, Kristína Hušeková, Ladislav Harmatha
Publikováno v:
Applied Surface Science. 461:48-53
This paper presents an electrical and photoelectrochemical comparison of MIS photoanodes with a metal organic chemical vapor deposited RuO2 layer and evaporated Ni layer to provide a deeper insight into the interface properties of such structures. Th
Autor:
M. Hulman, Vlastimil Rehacek, M. Predanocy, Henry Romanus, Lothar Spiess, Ivan Hotovy, M. Sojková, Ivan Kostic, Miroslav Mikolášek
Publikováno v:
Applied Surface Science. 461:133-138
Our activities were focused on the preparation of WS2 films on sapphire substrates by sulfurization of different thick sputtered W films. The influence of very thin W films in the range from 4 nm to 12 nm on the structural, morphological and optical
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021).
Metal-oxide nanostructures with precisely controlled geometries can play an important role in the technological improvement of sensors for gas detection. In this article we deal with the preparation of sensoric structures of sputtered TiO2 film the a
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
This paper is dedicated to the characterization of MoS 2 supercapacitor structures by means of electrochemical methods. The pseudocapacitive behaviour of MoS 2 structure is suggested as a dominant charge mechanism. The strong impact of the scan rate