Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Vlasenko, L. A."'
Autor:
Jarvinen, J., Zvezdov, D., Ahokas, J., Sheludyakov, S., Lehtonen, L., Vasiliev, S., Vlasenko, L., Ishikawa, Y., Fujii, Y.
We present an experimental study of the Dynamic Nuclear Polarization (DNP) of \si{} nuclei in silicon crystals of natural abundance doped with As in the temperature range 0.1-1 K and in strong magnetic field of 4.6 T. This ensures very high degree of
Externí odkaz:
http://arxiv.org/abs/1911.11654
Autor:
Järvinen, J., Ahokas, J., Sheludyakov, S., Vainio, O., Lehtonen, L., Vasiliev, S., Zvezdov, D., Vlasenko, L.
We present the results of experiments on dynamic nuclear polarization and relaxation of 75As in silicon crystals. Experiments are performed in strong magnetic fields of 4.6 T and temperatures below 1 K. At these conditions donor electron spins are fu
Externí odkaz:
http://arxiv.org/abs/1611.04384
Autor:
Mortemousque, P. A., Rosenius, S., Pica, G., Franke, D. P., Sekiguchi, T., Truong, A., Vlasenko, M. P., Vlasenko, L. S., Brandt, M. S., Elliman, R. G., Itoh, K. M.
Publikováno v:
Nanotechnology 27, 494001 (2016)
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors
Externí odkaz:
http://arxiv.org/abs/1506.04028
Autor:
Järvinen, J., Zvezdov, D., Ahokas, J., Sheludyakov, S., Vainio, O., Lehtonen, L., Vasiliev, S., Fujii, Y., Mitsudo, S., Mizusaki, T., Gwak, M., Lee, SangGap, Lee, Soonchil, Vlasenko, L.
Publikováno v:
Phys. Rev. B 92, 121202 (2015)
We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear
Externí odkaz:
http://arxiv.org/abs/1409.6462
Autor:
Järvinen, J., Zvezdov, D., Ahokas, J., Sheludyakov, S., Vainio, O., Lehtonen, L., Vasiliev, S., Fujii, Y., Mitsudo, S., Mizusaki, T., Gwak, M., Lee, SangGap, Lee, Soonchil, Vlasenko, L.
We demonstrate that the dynamic nuclear polarization (DNP) of phosphorus donors in silicon can be very effective in a magnetic field of 4.6 T and at temperatures below 1 K. The DNP occurs due to the Overhauser effect following a cross relaxation via
Externí odkaz:
http://arxiv.org/abs/1402.4288
Autor:
Mortemousque, P. A., Sekiguchi, T., Culan, C., Vlasenko, M. P., Elliman, R. G., Vlasenko, L. S., Itoh, K. M.
Publikováno v:
Appl. Phys. Lett. 101, 082409 (2012)
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity dist
Externí odkaz:
http://arxiv.org/abs/1208.2313
Autor:
Morishita, H., Vlasenko, L. S., Tanaka, H., Semba, K., Sawano, K., Shiraki, Y., Eto, M., Itoh, K. M.
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than
Externí odkaz:
http://arxiv.org/abs/0907.0769
Publikováno v:
Cybernetics & Systems Analysis; May2024, Vol. 60 Issue 3, p433-441, 9p
Publikováno v:
Ukrainian Mathematical Journal. Jul2022, Vol. 74 Issue 2, p186-202. 17p.
Publikováno v:
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 5p, 1 Diagram, 2 Charts, 6 Graphs