Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Vladislav Vashchenko"'
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a066e3efc92a77433675100e55008f9
https://doi.org/10.1109/irps48203.2023.10118321
https://doi.org/10.1109/irps48203.2023.10118321
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0383b1bc0b92652ecd11ae566290730
https://doi.org/10.23919/eos/esd54763.2022.9928458
https://doi.org/10.23919/eos/esd54763.2022.9928458
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1dd2b1889e2bd195ccc4b284471b66
https://doi.org/10.23919/eos/esd54763.2022.9928490
https://doi.org/10.23919/eos/esd54763.2022.9928490
Autor:
Vladislav Vashchenko
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d1211771f7b8c14cb5452edd860256
https://doi.org/10.23919/eos/esd54763.2022.9928467
https://doi.org/10.23919/eos/esd54763.2022.9928467
Autor:
Vladislav Vashchenko, David Marreiro
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30571f91b6ce9e63773da309e28ccfce
https://doi.org/10.23919/eos/esd54763.2022.9928518
https://doi.org/10.23919/eos/esd54763.2022.9928518
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ecb607201117d6d33cb3251e596b917
https://doi.org/10.23919/eos/esd54763.2022.9928525
https://doi.org/10.23919/eos/esd54763.2022.9928525
Autor:
David Marreiro, Vladislav Vashchenko
Publikováno v:
2019 41st Annual EOS/ESD Symposium (EOS/ESD).
A correlation between latchup conditions induced by injection at standard qualification latchup test and by system-level ESD pulsed current is studied. Through comparison of the standard test and TLP regimes the initial insight about latchup preventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ebbe8a853bd8b05d78f7eebb49c80f
https://doi.org/10.23919/eos/esd.2019.8869971
https://doi.org/10.23919/eos/esd.2019.8869971
Publikováno v:
2019 41st Annual EOS/ESD Symposium (EOS/ESD).
A dual injection latchup phenomenon in rail based ESD protection network was studied using wafer level experiments. When the ESD rail is floating, low side injection causes a positive feedback with the high side diode connected to the power supply. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582219d269cb3ba054a604ea265ec920
https://doi.org/10.23919/eos/esd.2019.8869970
https://doi.org/10.23919/eos/esd.2019.8869970
Publikováno v:
2019 41st Annual EOS/ESD Symposium (EOS/ESD).
A clamp level solution for ESD, EOS and overvoltage protection of LV CMOS circuits is suggested and experimentally validated. Based on simulation and experimental results the suggested mini clamp design is found to be adequate for 1.8V maximum operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb6b89abdb071c758db5077b4027f87
https://doi.org/10.23919/eos/esd.2019.8870009
https://doi.org/10.23919/eos/esd.2019.8870009
Autor:
David Marreiro, Vladislav Vashchenko
Publikováno v:
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
The novel wafer-level test method is used to study HV latch-up specifics through comparisons between two most common power analog processes - Extended CMOS and BCD. The dependence of the critical injector-victim voltage upon the injector-victim spaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ccbf378db3174edcba614143332f1af
https://doi.org/10.23919/eos/esd.2018.8509741
https://doi.org/10.23919/eos/esd.2018.8509741