Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vladislav V. Andryushkin"'
Autor:
Pavel E. Kopytov, Vladislav V. Andryushkin, Evgeniy V. Pirogov, Maxim S. Sobolev, Andrey V. Babichev, Yuri M. Shernyakov, Mikhail V. Maximov, Andrey V. Lyutetskiy, Nikita A. Pikhtin, Leonid Ya. Karachinsky, Innokenty I. Novikov, Sicong Tian, Anton Yu. Egorov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 24, Iss 5, Pp 709-716 (2024)
The results of investigation of the gain properties of 1300 nm vertical-cavity surface-emitting lasers active regions based on In0.60Ga0.40As/In0.53Al0.20Ga0.27As superlattices and threshold characteristics comparison of superlattices and highly la
Externí odkaz:
https://doaj.org/article/32f389a449994c8fb8ab2680d4c25c36
Autor:
Yakov N. Kovach, Vladislav V. Andryushkin, Evgenii S. Kolodeznyi, Innokenty I. Novikov, Artem A. Petrenko, Anna V. Kamarchuk, Stanislav S. Rochas, Dmitrii A. Bauman
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 873-880 (2022)
Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered photodetector module has responsivity in 1.3–1.6 μm. The problem of optical power loss due to inac
Externí odkaz:
https://doaj.org/article/7fb5da5a87a84aed867b11b7c218f7a3
Autor:
Vladislav V. Andryushkin, Anna S. Dragunova, Sergey D. Komarov, Alexey M. Nadtochiy, Andrey G. Gladyshev, Andrey V. Babichev, Alexander V. Uvarov, Innokenty I. Novikov, Evgenii S. Kolodeznyi, Leonid Ya. Karachinsky, Natalia V. Kryzhanovskaya, Vladimir N. Nevedomskii, Anton Yu. Egorov, Vladislav E. Bougrov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 921-928 (2022)
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were fo
Externí odkaz:
https://doaj.org/article/767f65f8e2974eb19d57bbb18aeb31cf
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0172fb08c0b551ee80b6af5d48d4ea
https://doi.org/10.1109/jqe.2022.3141418
https://doi.org/10.1109/jqe.2022.3141418
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Victor M. Ustinov, Vladislav E. Bougrov, Anton Yu. Egorov, Leonid Ya. Karachinsky
Publikováno v:
Optical Engineering. 61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87bd2f091665d4c637e407f770dedbe7
https://doi.org/10.1117/1.oe.61.9.096109
https://doi.org/10.1117/1.oe.61.9.096109
Autor:
Sergey A. Blokhin, Nikolay Ledentsov, Stanislav S. Rochas, Andrey V. Babichev, Andrey G. Gladyshev, Lukasz Chorchos, Oleg Y. Makarov, Leonid Ya Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70904b8cc217008ac2bc9e258ee60d2c
https://doi.org/10.1117/12.2605451
https://doi.org/10.1117/12.2605451
Autor:
Natalia V Kryzhanovskaya, Alexey I Likhachev, Sergey A Blokhin, Alexey A Blokhin, Evgeniy V Pirogov, Maxim S Sobolev, Andrey V Babichev, Andrey G Gladyshev, Leonid Ya Karachinsky, Innokenty I Novikov, Vladislav V Andryushkin, Dmitrii V Denisov, Anton Yu Egorov
Publikováno v:
Laser Physics Letters. 19:075801
Неre we report a monolitic long-wavelength vertical cavity surface-emitting laser based on GaAs with bottom GaAs/AlGaAs distributed Bragg reflectors (DBRs), metamorphic optical cavity with In0.41Ga0.59As/In0.25Ga0.75As-active region providing emiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f997082da42b09baa47cf1d480c9637b
https://doi.org/10.1088/1612-202x/ac6e6e
https://doi.org/10.1088/1612-202x/ac6e6e
Autor:
Dmitriy V. Denisov, Aleksandr Yu Potapov, Innokenty I. Novikov, A. G. Gladyshev, Vladislav E. Bougrov, E. S. Kolodeznyi, S. S. Rochas, Vladislav V. Andryushkin, Anton Yu. Egorov, Leonid Ya. Karachinsky, A. V. Babichev, Alexey M. Nadtochiy
Publikováno v:
Journal of Luminescence. 239:118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum wells which were separated by In0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfa8619c706b934aff5891247046ed8
https://doi.org/10.1016/j.jlumin.2021.118393
https://doi.org/10.1016/j.jlumin.2021.118393